Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt

Heather O'Brien; William Shaheen; Timothy Crowley; Stephen B. Bayne

doi:10.1109/MODSYM.2006.365226

Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt

Heather O'Brien, William Shaheen, Timothy Crowley, Stephen B. Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The evaluation of each 10 kV, 400 kA Si SGTO included a visual inspection and high-potting of each component module prior to pulsing. The complete unit was then switched in a low inductance RLC circuit to test voltage and current capabilities and maximize dI/dt. Devices were switched as many as 70 times without failure. Voltage sharing between the layers was within ± 2%, and current sharing between the modules was ± 5% of ideal sharing. The peak rate of current rise attained was 40 kA/μs, and the 50% pulse width of the current was 26 μs. The peak power switched was 1.06 GW, and the action of the forward current pulse reached 6.4 MA²s. This report includes details on the methods for evaluating the 400 kA SGTO, challenges faced and peak performance of the devices under single shot pulsing conditions.

Original language	English
Title of host publication	2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
Pages	236-239
Number of pages	4
DOIs	https://doi.org/10.1109/MODSYM.2006.365226
State	Published - 2006
Event	2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop) - Washington, DC, United States Duration: May 14 2006 → May 18 2006

Publication series

Name	Conference Record of the International Power Modulator Symposium and High Voltage Workshop
ISSN (Print)	1076-8467

Conference

Conference	2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
Country/Territory	United States
City	Washington, DC
Period	05/14/06 → 05/18/06

Access to Document

10.1109/MODSYM.2006.365226

Cite this

O'Brien, H., Shaheen, W., Crowley, T., & Bayne, S. B. (2006). Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt. In 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop) (pp. 236-239). [4216178] (Conference Record of the International Power Modulator Symposium and High Voltage Workshop). https://doi.org/10.1109/MODSYM.2006.365226

@inproceedings{a2944abf64114a23941d2ae3d07a3d52,

title = "Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt",

abstract = "The evaluation of each 10 kV, 400 kA Si SGTO included a visual inspection and high-potting of each component module prior to pulsing. The complete unit was then switched in a low inductance RLC circuit to test voltage and current capabilities and maximize dI/dt. Devices were switched as many as 70 times without failure. Voltage sharing between the layers was within ± 2%, and current sharing between the modules was ± 5% of ideal sharing. The peak rate of current rise attained was 40 kA/μs, and the 50% pulse width of the current was 26 μs. The peak power switched was 1.06 GW, and the action of the forward current pulse reached 6.4 MA2s. This report includes details on the methods for evaluating the 400 kA SGTO, challenges faced and peak performance of the devices under single shot pulsing conditions.",

author = "Heather O'Brien and William Shaheen and Timothy Crowley and Bayne, {Stephen B.}",

year = "2006",

doi = "10.1109/MODSYM.2006.365226",

language = "English",

isbn = "142440018X",

series = "Conference Record of the International Power Modulator Symposium and High Voltage Workshop",

pages = "236--239",

booktitle = "2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)",

note = "2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop) ; Conference date: 14-05-2006 Through 18-05-2006",

}

O'Brien, H, Shaheen, W, Crowley, T & Bayne, SB 2006, Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt. in 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)., 4216178, Conference Record of the International Power Modulator Symposium and High Voltage Workshop, pp. 236-239, 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop), Washington, DC, United States, 05/14/06. https://doi.org/10.1109/MODSYM.2006.365226

Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt. / O'Brien, Heather; Shaheen, William; Crowley, Timothy et al.
2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop). 2006. p. 236-239 4216178 (Conference Record of the International Power Modulator Symposium and High Voltage Workshop).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt

AU - O'Brien, Heather

AU - Shaheen, William

AU - Crowley, Timothy

AU - Bayne, Stephen B.

PY - 2006

Y1 - 2006

N2 - The evaluation of each 10 kV, 400 kA Si SGTO included a visual inspection and high-potting of each component module prior to pulsing. The complete unit was then switched in a low inductance RLC circuit to test voltage and current capabilities and maximize dI/dt. Devices were switched as many as 70 times without failure. Voltage sharing between the layers was within ± 2%, and current sharing between the modules was ± 5% of ideal sharing. The peak rate of current rise attained was 40 kA/μs, and the 50% pulse width of the current was 26 μs. The peak power switched was 1.06 GW, and the action of the forward current pulse reached 6.4 MA2s. This report includes details on the methods for evaluating the 400 kA SGTO, challenges faced and peak performance of the devices under single shot pulsing conditions.

AB - The evaluation of each 10 kV, 400 kA Si SGTO included a visual inspection and high-potting of each component module prior to pulsing. The complete unit was then switched in a low inductance RLC circuit to test voltage and current capabilities and maximize dI/dt. Devices were switched as many as 70 times without failure. Voltage sharing between the layers was within ± 2%, and current sharing between the modules was ± 5% of ideal sharing. The peak rate of current rise attained was 40 kA/μs, and the 50% pulse width of the current was 26 μs. The peak power switched was 1.06 GW, and the action of the forward current pulse reached 6.4 MA2s. This report includes details on the methods for evaluating the 400 kA SGTO, challenges faced and peak performance of the devices under single shot pulsing conditions.

UR - http://www.scopus.com/inward/record.url?scp=48349131416&partnerID=8YFLogxK

U2 - 10.1109/MODSYM.2006.365226

DO - 10.1109/MODSYM.2006.365226

M3 - Conference contribution

AN - SCOPUS:48349131416

SN - 142440018X

SN - 9781424400188

T3 - Conference Record of the International Power Modulator Symposium and High Voltage Workshop

SP - 236

EP - 239

BT - 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)

T2 - 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)

Y2 - 14 May 2006 through 18 May 2006

ER -

O'Brien H, Shaheen W, Crowley T, Bayne SB. Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt. In 2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop). 2006. p. 236-239. 4216178. (Conference Record of the International Power Modulator Symposium and High Voltage Workshop). doi: 10.1109/MODSYM.2006.365226

Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt

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