Evaluation of a 10 kV, 400 kA Si SGTO at high dI/dt

Heather O'Brien, William Shaheen, Timothy Crowley, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The evaluation of each 10 kV, 400 kA Si SGTO included a visual inspection and high-potting of each component module prior to pulsing. The complete unit was then switched in a low inductance RLC circuit to test voltage and current capabilities and maximize dI/dt. Devices were switched as many as 70 times without failure. Voltage sharing between the layers was within ± 2%, and current sharing between the modules was ± 5% of ideal sharing. The peak rate of current rise attained was 40 kA/μs, and the 50% pulse width of the current was 26 μs. The peak power switched was 1.06 GW, and the action of the forward current pulse reached 6.4 MA2s. This report includes details on the methods for evaluating the 400 kA SGTO, challenges faced and peak performance of the devices under single shot pulsing conditions.

Original languageEnglish
Title of host publication2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
Pages236-239
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop) - Washington, DC, United States
Duration: May 14 2006May 18 2006

Publication series

NameConference Record of the International Power Modulator Symposium and High Voltage Workshop
ISSN (Print)1076-8467

Conference

Conference2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
CountryUnited States
CityWashington, DC
Period05/14/0605/18/06

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