Evaluation of 10 kV, 80 kA Si SGTO switching components for army pulsed power applications

Tim Crowley, Heather O'Brien, William Shaheen, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

The U.S. Army Research Lab (ARL) is investigating the switching capabilities of advanced silicon devices for high current pulsed power applications. These solid state switches are intended to replace more traditional vacuum switches. The benefits of these switches are higher dI/dt, peak power levels and current densities, increased reliability and lifetime, and smaller switch volume [1]. The peak current achieved by the device was 83.3 kA, with a 10% to 90% rise time of 3.5 μs while a 0.263 MA2 without failure. The peak power of the device during this test shot was 78.7 MW. ARL is collaborating with Silicon Power Corp. (SPCO) to evaluate Super-GTO performance and improve upon switch/buss bar packaging for pulsed power applications.

Original languageEnglish
Title of host publication2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
Pages240-243
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop) - Washington, DC, United States
Duration: May 14 2006May 18 2006

Publication series

NameConference Record of the International Power Modulator Symposium and High Voltage Workshop
ISSN (Print)1076-8467

Conference

Conference2006 IEEE International Power Modulator Conference, IPMC(27th Power Modulator Symposium and 2006 High Voltage Workshop)
CountryUnited States
CityWashington, DC
Period05/14/0605/18/06

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