Evaluation and comparison of 1200-V/285-A silicon carbide half-bridge MOSFET modules

Mitchell D. Kelley, Argenis V. Bilbao, William B. Ray, James A. Schrock, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Silicon Carbide (4H-SiC) is a state-of-the-art solution for increasing the energy density of pulsed power and power electronics. High power SiC MOSFET modules have only recently become commercially available; for widespread acceptance further device characterization and reliability testing is necessary the purpose of this work is to establish and compare device characteristics for two SiC power modules. Of the two modules tested, one contained Cree die and the other Rohm die the device characteristics presented for the two modules are switching losses (EON & EOFF) and on-state resistance (RDS(ON)). EON, EOFF, and RDS(ON) were measured at 25°C and 125°C the RDS(ON) of the two modules was determined to be approximately equal; however, the SiC module containing the Cree die yielded significantly lower turn-on and turn-off switching losses the measurements presented in this work demonstrate SiC power modules are a leading solution for high energy density applications.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference


ConferenceIEEE Pulsed Power Conference, PPC 2015
Country/TerritoryUnited States


  • Logic gates
  • Silicon carbide
  • Switches
  • Switching loss
  • Temperature
  • Temperature measurement


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