Erratum: Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors (Journal of Applied Physics (2003) 93 (10046))

R. P. Joshi; V. Sridhara; B. Jogai; P. Shah; R. D. Del Rosario

doi:10.1063/1.3679426

Erratum: Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors (Journal of Applied Physics (2003) 93 (10046))

R. P. Joshi, V. Sridhara, B. Jogai, P. Shah, R. D. Del Rosario

Electrical and Computer Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	029901
Journal	Journal of Applied Physics
Volume	111
Issue number	2
DOIs	https://doi.org/10.1063/1.3679426
State	Published - Jan 15 2012

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Erratum: Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors (Journal of Applied Physics (2003) 93 (10046))

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