Erratum: Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors (Journal of Applied Physics (2003) 93 (10046))

R. P. Joshi, V. Sridhara, B. Jogai, P. Shah, R. D. Del Rosario

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number029901
JournalJournal of Applied Physics
Volume111
Issue number2
DOIs
StatePublished - Jan 15 2012

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