Erbium energy levels in GaN grown by hydride vapor phase epitaxy

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@article{170cb2d09856412199c5abca560d8794,

title = "Erbium energy levels in GaN grown by hydride vapor phase epitaxy",

author = "Yaqion Yan and Smith, {Trey B} and Jing Li and Jingyu Lin and Hongxing Jiang",

year = "2020",

month = dec,

doi = "10.1063/5.0028470",

language = "English",

pages = "125006",

journal = "AIP Advances",

publisher = "American Instiute of Physics",

}