Erbium doped GaN synthesized by hydride vapor-phase epitaxy

Engineering & Materials Science

• Vapor phase epitaxy 100%
• Erbium 88%
• Hydrides 71%
• High energy lasers 61%
• Crystals 37%
• Epilayers 32%
• Organic chemicals 29%
• Yttrium aluminum garnet 28%
• Neodymium 27%
• Sapphire 25%
• Chemical vapor deposition 21%
• Single crystals 21%
• Thermal expansion 19%
• Thermal conductivity 17%
• Wavelength 16%
• Flow rate 14%
• Metals 12%
• Temperature 7%

Chemistry

• Vapor Phase Epitaxy 89%
• Erbium 70%
• Hydride 47%
• Thermal Expansion Coefficient 21%
• Thermal Conductivity 17%
• Energy 17%
• Flow Kinetics 14%
• Single Crystalline Solid 13%
• Wavelength 13%
• Ambient Reaction Temperature 10%