Erbium-doped GaN optical amplifiers operating at 1.54 μm

R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, J. M. Zavada

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Abstract

Strip optical waveguides based on erbium (Er)-doped AlGaN/GaN:Er/AlGaN heterostructures have been fabricated and characterized in the optical communication wavelength window near 1.54 μm. The propagation loss of these waveguide amplifiers have been measured at 1.54 mu;m and found to be 3.5 cm-1. Moreover, the optical amplification properties of the waveguides were measured using a signal input at 1.54 μm and a broadband GaN light-emitting diode at 365 nm as pump source. A relative signal enhancement of ∼8 cm-1 was observed. The implications of such devices in photonic integrated circuits for optical communications are discussed.

Original languageEnglish
Article number111109
JournalApplied Physics Letters
Volume95
Issue number11
DOIs
StatePublished - 2009

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