Erbium-doped GaN optical amplifiers operating at 1.54 µm

R. Dahal, C. Ugolini, Jingyu Lin, Hongxing Jiang, J. M. Zavada

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)111109
JournalAppl. Phys. Lett.
StatePublished - Sep 16 2009

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