TY - JOUR
T1 - Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition
AU - Al Tahtamouni, Talal Mohammed
AU - Du, Xiaozhang
AU - Lin, Jingyu
AU - Jiang, Hongxing
N1 - Publisher Copyright:
© 2014 Optical Society of America.
PY - 2015
Y1 - 2015
N2 - Erbium doped AlN epilayers (AlN:Er) have been grown by metal organic chemical vapor deposition. The 1.54 μm emission properties were probed by photoluminescence (PL) emission spectroscopy and compared with those of GaN:Er. Optimum intensity of the 1.54 μm emission from AlN:Er was obtained for growth temperature at 1050 °C. It was found that the emission intensity from AlN:Er is higher than that from GaN:Er for above and below energy gap, as well as resonant excitation. A significant narrowing of the infrared Er3+ PL lines was observed when pumping resonantly into an intra-4f transition. The integrated intensity of the 1.54 μm emission shows a decrease by a factor of only 1.2 between 10 K and 300 K.
AB - Erbium doped AlN epilayers (AlN:Er) have been grown by metal organic chemical vapor deposition. The 1.54 μm emission properties were probed by photoluminescence (PL) emission spectroscopy and compared with those of GaN:Er. Optimum intensity of the 1.54 μm emission from AlN:Er was obtained for growth temperature at 1050 °C. It was found that the emission intensity from AlN:Er is higher than that from GaN:Er for above and below energy gap, as well as resonant excitation. A significant narrowing of the infrared Er3+ PL lines was observed when pumping resonantly into an intra-4f transition. The integrated intensity of the 1.54 μm emission shows a decrease by a factor of only 1.2 between 10 K and 300 K.
UR - http://www.scopus.com/inward/record.url?scp=84924965364&partnerID=8YFLogxK
U2 - 10.1364/OME.5.000648
DO - 10.1364/OME.5.000648
M3 - Article
AN - SCOPUS:84924965364
SN - 2159-3930
VL - 5
SP - 648
EP - 654
JO - Optical Materials Express
JF - Optical Materials Express
IS - 3
ER -