Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition

Talal M Al tahtamouni, Xiaozhang Du, Jing Li, Jingyu Lin, Hongxing Jiang

Research output: Contribution to journal › Article › peer-review

Cite this

@article{500f214307054adbb030b968d3f36d2a,

title = "Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition",

author = "tahtamouni, {Talal M Al} and Xiaozhang Du and Jing Li and Jingyu Lin and Hongxing Jiang",

year = "2015",

month = jan,

language = "English",

pages = "274",

journal = "Optical Materials Express",

}