Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

R. Dahal, Jing Li, S. Majety, B. N. Pantha, Xiangke Cao, Jingyu Lin, Hongxing Jiang

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@article{874f4c045e424bf48e7f1a601bae5e39,

title = "Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material",

author = "R. Dahal and Jing Li and S. Majety and Pantha, {B. N.} and Xiangke Cao and Jingyu Lin and Hongxing Jiang",

year = "2011",

month = may,

day = "24",

doi = "10.1063/1.3593958",

language = "English",

pages = "211110",

journal = "Appl. Phys. Lett.",

publisher = "AIP",

}

TY - JOUR

T1 - Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

AU - Dahal, R.

AU - Li, Jing

AU - Majety, S.

AU - Pantha, B. N.

AU - Cao, Xiangke

AU - Lin, Jingyu

AU - Jiang, Hongxing

PY - 2011/5/24

Y1 - 2011/5/24

U2 - 10.1063/1.3593958

DO - 10.1063/1.3593958

M3 - Article

SP - 211110

JO - Appl. Phys. Lett.

JF - Appl. Phys. Lett.

ER -