| Original language | English |
|---|---|
| Pages (from-to) | 031908 |
| Journal | Appl Phys Lett |
| State | Published - 2010 |
Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers
I W Feng, J Li, A Sedhain, Jingyu Lin, Hongxing Jiang, J Zavada
Research output: Contribution to journal › Article › peer-review