Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

I W Feng, J Li, A Sedhain, Jingyu Lin, Hongxing Jiang, J Zavada

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)031908
JournalAppl Phys Lett
StatePublished - 2010

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