Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

I. W. Feng; J. Li; A. Sedhain; J. Y. Lin; H. X. Jiang; J. Zavada

doi:10.1063/1.3295705

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, J. Zavada

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Abstract

Much research has been devoted to the incorporation of erbium (Er) into semiconductors aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to be an excellent host material for Er ions due to its structural and thermal stability. Er-doped GaN (GaN:Er) epilayers were grown on different templates, _GaN/Al2 O₃, AlN/ Al2 O ₃, GaN/Si (111), and c-GaN bulk. The effects of stress on 1.54 μm emission intensity, caused by lattice mismatch between the GaN:Er epilayer and the substrate, were probed. The emission intensity at 1.54 μm increased with greater tensile stress in the c-direction of the GaN:Er epilayers. These results indicate that the characteristics of photonic devices based on GaN:Er can be optimized through strain engineering.

Original language	English
Article number	031908
Journal	Applied Physics Letters
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.3295705
State	Published - 2010

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title = "Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers",

abstract = "Much research has been devoted to the incorporation of erbium (Er) into semiconductors aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to be an excellent host material for Er ions due to its structural and thermal stability. Er-doped GaN (GaN:Er) epilayers were grown on different templates, GaN/Al2 O3, AlN/ Al2 O 3, GaN/Si (111), and c-GaN bulk. The effects of stress on 1.54 μm emission intensity, caused by lattice mismatch between the GaN:Er epilayer and the substrate, were probed. The emission intensity at 1.54 μm increased with greater tensile stress in the c-direction of the GaN:Er epilayers. These results indicate that the characteristics of photonic devices based on GaN:Er can be optimized through strain engineering.",

author = "Feng, {I. W.} and J. Li and A. Sedhain and Lin, {J. Y.} and Jiang, {H. X.} and J. Zavada",

note = "Funding Information: The MOCVD growth effort is supported by ARO (Grant No. W911NF-09-1-0275) and U.S. Army CERDEC (Grant No. W15P7T-07-D-P040) and PL study effort is supported by NSF (Grant No. ECCS-0854619). H.X.J. and J.Y.L. would like to acknowledge the support of Whitacre endowed chairs through AT&T foundation.",

year = "2010",

doi = "10.1063/1.3295705",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

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TY - JOUR

T1 - Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

AU - Feng, I. W.

AU - Li, J.

AU - Sedhain, A.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J.

N1 - Funding Information: The MOCVD growth effort is supported by ARO (Grant No. W911NF-09-1-0275) and U.S. Army CERDEC (Grant No. W15P7T-07-D-P040) and PL study effort is supported by NSF (Grant No. ECCS-0854619). H.X.J. and J.Y.L. would like to acknowledge the support of Whitacre endowed chairs through AT&T foundation.

PY - 2010

Y1 - 2010

N2 - Much research has been devoted to the incorporation of erbium (Er) into semiconductors aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to be an excellent host material for Er ions due to its structural and thermal stability. Er-doped GaN (GaN:Er) epilayers were grown on different templates, GaN/Al2 O3, AlN/ Al2 O 3, GaN/Si (111), and c-GaN bulk. The effects of stress on 1.54 μm emission intensity, caused by lattice mismatch between the GaN:Er epilayer and the substrate, were probed. The emission intensity at 1.54 μm increased with greater tensile stress in the c-direction of the GaN:Er epilayers. These results indicate that the characteristics of photonic devices based on GaN:Er can be optimized through strain engineering.

AB - Much research has been devoted to the incorporation of erbium (Er) into semiconductors aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to be an excellent host material for Er ions due to its structural and thermal stability. Er-doped GaN (GaN:Er) epilayers were grown on different templates, GaN/Al2 O3, AlN/ Al2 O 3, GaN/Si (111), and c-GaN bulk. The effects of stress on 1.54 μm emission intensity, caused by lattice mismatch between the GaN:Er epilayer and the substrate, were probed. The emission intensity at 1.54 μm increased with greater tensile stress in the c-direction of the GaN:Er epilayers. These results indicate that the characteristics of photonic devices based on GaN:Er can be optimized through strain engineering.

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JO - Applied Physics Letters

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ER -

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

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