This report focuses on the effect of carrier overflow on the threshold current and slope efficiency of 1.3-μm compressively strained InGaAsP lasers. Carrier leakage is enhanced through band structure changes induced by hydrostatic pressure. Experiments are carried out to show that the changes in the conduction band discontinuity and resulting increased carrier leakage increase the laser threshold current and reduce the slope efficiency.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - 1996|
|Event||Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA|
Duration: Jun 2 1996 → Jun 7 1996