Enhancement and deterioration of the output characteristics of compressively strained InGaAsP lasers with hydrostatic pressure

D. Patel; C. S. Menoni; P. Connors; M. Ochiai; A. A. Bernussi; H. Temkin

Enhancement and deterioration of the output characteristics of compressively strained InGaAsP lasers with hydrostatic pressure

D. Patel, C. S. Menoni, P. Connors, M. Ochiai, A. A. Bernussi, H. Temkin

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

This report focuses on the effect of carrier overflow on the threshold current and slope efficiency of 1.3-μm compressively strained InGaAsP lasers. Carrier leakage is enhanced through band structure changes induced by hydrostatic pressure. Experiments are carried out to show that the changes in the conduction band discontinuity and resulting increased carrier leakage increase the laser threshold current and reduce the slope efficiency.

Original language	English
Pages (from-to)	410-411
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
State	Published - 1996
Event	Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA Duration: Jun 2 1996 → Jun 7 1996

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@article{5109c22c8c0f4e6c986b532706fa6f76,

title = "Enhancement and deterioration of the output characteristics of compressively strained InGaAsP lasers with hydrostatic pressure",

abstract = "This report focuses on the effect of carrier overflow on the threshold current and slope efficiency of 1.3-μm compressively strained InGaAsP lasers. Carrier leakage is enhanced through band structure changes induced by hydrostatic pressure. Experiments are carried out to show that the changes in the conduction band discontinuity and resulting increased carrier leakage increase the laser threshold current and reduce the slope efficiency.",

author = "D. Patel and Menoni, {C. S.} and P. Connors and M. Ochiai and Bernussi, {A. A.} and H. Temkin",

year = "1996",

language = "English",

pages = "410--411",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

}

Enhancement and deterioration of the output characteristics of compressively strained InGaAsP lasers with hydrostatic pressure. / Patel, D.; Menoni, C. S.; Connors, P.; Ochiai, M.; Bernussi, A. A.; Temkin, H.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1996, p. 410-411.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Enhancement and deterioration of the output characteristics of compressively strained InGaAsP lasers with hydrostatic pressure

AU - Patel, D.

AU - Menoni, C. S.

AU - Connors, P.

AU - Ochiai, M.

AU - Bernussi, A. A.

AU - Temkin, H.

PY - 1996

Y1 - 1996

N2 - This report focuses on the effect of carrier overflow on the threshold current and slope efficiency of 1.3-μm compressively strained InGaAsP lasers. Carrier leakage is enhanced through band structure changes induced by hydrostatic pressure. Experiments are carried out to show that the changes in the conduction band discontinuity and resulting increased carrier leakage increase the laser threshold current and reduce the slope efficiency.

AB - This report focuses on the effect of carrier overflow on the threshold current and slope efficiency of 1.3-μm compressively strained InGaAsP lasers. Carrier leakage is enhanced through band structure changes induced by hydrostatic pressure. Experiments are carried out to show that the changes in the conduction band discontinuity and resulting increased carrier leakage increase the laser threshold current and reduce the slope efficiency.

UR - http://www.scopus.com/inward/record.url?scp=0029701166&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029701166

SP - 410

EP - 411

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SN - 1092-8081

Y2 - 2 June 1996 through 7 June 1996

ER -