Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy

B. A. Borisov, S. N. Nikishin, V. V. Kuryatkov, V. I. Kuchinskiĭ, M. Holtz, H. Temkin

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Dependences of the intensity of cathodoluminescence in multiple Al 0.55 Ga 0.45 N/Al 0.45 Ga 0.55 N quantum wells grown by molecular-beam epitaxy on the growth conditions are studied. An increase (by almost two orders of magnitude) in the intensity of the cathodoluminescence peak with an energy of 4.45 eV is observed as the quantum-well layer grows in the conditions of deep depletion with respect to ammonia. In this case, a tendency towards the mode of three-dimensional growth can be inferred from the pattern of diffraction of high-energy electrons; this effect is interpreted using a model of formation of AlGaN quantum dots.

Original languageEnglish
Pages (from-to)454-458
Number of pages5
JournalSemiconductors
Volume40
Issue number4
DOIs
StatePublished - Apr 2006

Fingerprint Dive into the research topics of 'Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy'. Together they form a unique fingerprint.

  • Cite this

    Borisov, B. A., Nikishin, S. N., Kuryatkov, V. V., Kuchinskiĭ, V. I., Holtz, M., & Temkin, H. (2006). Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy. Semiconductors, 40(4), 454-458. https://doi.org/10.1134/S1063782606040154