Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping

M. L. Nakarmi, K. H. Kim, J. Li, J. Y. Lin, H. X. Jiang

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The investigation of the Mg-δ-doping in GaN and AlGaN using metalorganic chemical vapor deposition was discussed. It was observed that the dislocation density reduction was due to the growth interruption in the Mg-δ-doping that partially terminates the dislocation propagation in the growth direction. It was found that the Mg-δ-doping reduces Mg impurity self-compensation and enhances the hole concentration in Mg-δ-doped GaN or AlGaN.

Original languageEnglish
Pages (from-to)3041-3043
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - May 5 2003


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