Enhanced luminescence from AlxGa1-xN/Al yGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin; Boris A. Borisov; Gregory A. Garrett; Wendy L. Sarney; Anand V. Sampath; Hongen Shen; Michael Wraback; Mark Holtz

doi:10.1117/12.701394

Enhanced luminescence from Al_xGa_1-xN/Al _yGa_1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin, Boris A. Borisov, Gregory A. Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback, Mark Holtz

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We report the structural and optical properties of Al_xGa _1-xN/Al_yGa_1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of Al_yGa _1-yN, 0.3<y<0.45, wells (nominally 2-4 nm thick) and Al _xGa_1-xN, 0.55<x<1, barriers (nominally 5 nm thick). All the structures were completed with a 10 nm thick cap layer of AlN. We observed a significant enhancement in the cathodoluminescence intensities and longer photoluminescence lifetimes for QW structures grown in the 3D mode, as confirmed by spotty reflection high energy electron diffraction patterns. These effects are attributed to the formation of AlGaN quantum dots in the well materials.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices II
DOIs	https://doi.org/10.1117/12.701394
State	Published - 2007
Event	Gallium Nitride Materials and Devices II - San Jose, CA, United States Duration: Jan 22 2007 → Jan 25 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6473
ISSN (Print)	0277-786X

Conference

Conference	Gallium Nitride Materials and Devices II
Country/Territory	United States
City	San Jose, CA
Period	01/22/07 → 01/25/07

Keywords

AlGaN quantum wells and dots
Growth mode of quantum wells
Time decay

Access to Document

10.1117/12.701394

Cite this

Nikishin, S. A., Borisov, B. A., Garrett, G. A., Sarney, W. L., Sampath, A. V., Shen, H., Wraback, M., & Holtz, M. (2007). Enhanced luminescence from Al_xGa_1-xN/Al _yGa_1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia. In Gallium Nitride Materials and Devices II [647306] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6473). https://doi.org/10.1117/12.701394

@inproceedings{16f3c28259664b938aec35bb5825b2ae,

title = "Enhanced luminescence from AlxGa1-xN/Al yGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia",

abstract = "We report the structural and optical properties of AlxGa 1-xN/AlyGa1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGa 1-yN, 0.3xGa1-xN, 0.55",

keywords = "AlGaN quantum wells and dots, Growth mode of quantum wells, Time decay",

author = "Nikishin, {Sergey A.} and Borisov, {Boris A.} and Garrett, {Gregory A.} and Sarney, {Wendy L.} and Sampath, {Anand V.} and Hongen Shen and Michael Wraback and Mark Holtz",

year = "2007",

doi = "10.1117/12.701394",

language = "English",

isbn = "0819465860",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Gallium Nitride Materials and Devices II",

note = "null ; Conference date: 22-01-2007 Through 25-01-2007",

}

Nikishin, SA, Borisov, BA, Garrett, GA, Sarney, WL, Sampath, AV, Shen, H, Wraback, M & Holtz, M 2007, Enhanced luminescence from Al_xGa_1-xN/Al _yGa_1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia. in Gallium Nitride Materials and Devices II., 647306, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6473, Gallium Nitride Materials and Devices II, San Jose, CA, United States, 01/22/07. https://doi.org/10.1117/12.701394

Enhanced luminescence from Al_xGa_1-xN/Al _yGa_1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia. / Nikishin, Sergey A.; Borisov, Boris A.; Garrett, Gregory A. et al.

Gallium Nitride Materials and Devices II. 2007. 647306 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6473).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhanced luminescence from AlxGa1-xN/Al yGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia

AU - Nikishin, Sergey A.

AU - Borisov, Boris A.

AU - Garrett, Gregory A.

AU - Sarney, Wendy L.

AU - Sampath, Anand V.

AU - Shen, Hongen

AU - Wraback, Michael

AU - Holtz, Mark

PY - 2007

Y1 - 2007

N2 - We report the structural and optical properties of AlxGa 1-xN/AlyGa1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGa 1-yN, 0.3xGa1-xN, 0.55

AB - We report the structural and optical properties of AlxGa 1-xN/AlyGa1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGa 1-yN, 0.3xGa1-xN, 0.55

KW - AlGaN quantum wells and dots

KW - Growth mode of quantum wells

KW - Time decay

UR - http://www.scopus.com/inward/record.url?scp=34248640847&partnerID=8YFLogxK

U2 - 10.1117/12.701394

DO - 10.1117/12.701394

M3 - Conference contribution

AN - SCOPUS:34248640847

SN - 0819465860

SN - 9780819465863

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices II

Y2 - 22 January 2007 through 25 January 2007

ER -