Enhanced luminescence from AlxGa1-xN/Al yGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia

Sergey A. Nikishin, Boris A. Borisov, Gregory A. Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback, Mark Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We report the structural and optical properties of AlxGa 1-xN/AlyGa1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGa 1-yN, 0.3<y<0.45, wells (nominally 2-4 nm thick) and Al xGa1-xN, 0.55<x<1, barriers (nominally 5 nm thick). All the structures were completed with a 10 nm thick cap layer of AlN. We observed a significant enhancement in the cathodoluminescence intensities and longer photoluminescence lifetimes for QW structures grown in the 3D mode, as confirmed by spotty reflection high energy electron diffraction patterns. These effects are attributed to the formation of AlGaN quantum dots in the well materials.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices II
DOIs
StatePublished - 2007
EventGallium Nitride Materials and Devices II - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6473
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices II
CountryUnited States
CitySan Jose, CA
Period01/22/0701/25/07

Keywords

  • AlGaN quantum wells and dots
  • Growth mode of quantum wells
  • Time decay

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