Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes

J. Shakya; K. H. Kim; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1768297

Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes

J. Shakya, K. H. Kim, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

The power enhancement by a factor of about 2.5 for 333 nm III-nitride Ultraviolet (UV) Light Emitting Diodes (LED) using two dimensional photonic crystal (PC) was discussed. Triangular arrays of the PCs with different diameters were patterned using electron beam lithography and inductively coupled plasma dry etching. It was observed that the optical enhancement factor depends on the lattice constant and hole size of the PCs. The results show that the PC-LED mesa design aimed at separating the light generation and extraction area.

Original language	English
Pages (from-to)	142-144
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.1768297
State	Published - Jul 5 2004

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title = "Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes",

abstract = "The power enhancement by a factor of about 2.5 for 333 nm III-nitride Ultraviolet (UV) Light Emitting Diodes (LED) using two dimensional photonic crystal (PC) was discussed. Triangular arrays of the PCs with different diameters were patterned using electron beam lithography and inductively coupled plasma dry etching. It was observed that the optical enhancement factor depends on the lattice constant and hole size of the PCs. The results show that the PC-LED mesa design aimed at separating the light generation and extraction area.",

author = "J. Shakya and Kim, {K. H.} and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The authors wish to acknowledge support by grants from DARPA, ARO, DOE, and NSF.",

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AU - Shakya, J.

AU - Kim, K. H.

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AU - Jiang, H. X.

N1 - Funding Information: The authors wish to acknowledge support by grants from DARPA, ARO, DOE, and NSF.

PY - 2004/7/5

Y1 - 2004/7/5

N2 - The power enhancement by a factor of about 2.5 for 333 nm III-nitride Ultraviolet (UV) Light Emitting Diodes (LED) using two dimensional photonic crystal (PC) was discussed. Triangular arrays of the PCs with different diameters were patterned using electron beam lithography and inductively coupled plasma dry etching. It was observed that the optical enhancement factor depends on the lattice constant and hole size of the PCs. The results show that the PC-LED mesa design aimed at separating the light generation and extraction area.

AB - The power enhancement by a factor of about 2.5 for 333 nm III-nitride Ultraviolet (UV) Light Emitting Diodes (LED) using two dimensional photonic crystal (PC) was discussed. Triangular arrays of the PCs with different diameters were patterned using electron beam lithography and inductively coupled plasma dry etching. It was observed that the optical enhancement factor depends on the lattice constant and hole size of the PCs. The results show that the PC-LED mesa design aimed at separating the light generation and extraction area.

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Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes

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