Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode

B. Borisov, S. Nikishin, V. Kuryatkov, H. Temkin

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45 Ga0.55 N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots.

Original languageEnglish
Article number191902
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number19
DOIs
StatePublished - Nov 7 2005

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