Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode

B. Borisov; S. Nikishin; V. Kuryatkov; H. Temkin

doi:10.1063/1.2128485

Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode

B. Borisov, S. Nikishin, V. Kuryatkov, H. Temkin

Electrical and Computer Engineering

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15 Scopus citations

Abstract

We report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45 Ga0.55 N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots.

Original language	English
Article number	191902
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	19
DOIs	https://doi.org/10.1063/1.2128485
State	Published - Nov 7 2005

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abstract = "We report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45 Ga0.55 N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots.",

author = "B. Borisov and S. Nikishin and V. Kuryatkov and H. Temkin",

note = "Funding Information: This study was supported by NSF [ECS-0323640 and ECS-0304224], DARPA, under SUVOS program monitored by Dr. J. Carrano, and the J. F Maddox Foundation.",

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AU - Borisov, B.

AU - Nikishin, S.

AU - Kuryatkov, V.

AU - Temkin, H.

N1 - Funding Information: This study was supported by NSF [ECS-0323640 and ECS-0304224], DARPA, under SUVOS program monitored by Dr. J. Carrano, and the J. F Maddox Foundation.

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Y1 - 2005/11/7

N2 - We report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45 Ga0.55 N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots.

AB - We report a significant improvement in the room temperature cathodoluminescence efficiency of AlGaN quantum wells when the three-dimensional growth mode is induced by reduced flux of ammonia. We interpret this observation in terms of formation of quantum dots of AlGaN in Al0.45 Ga0.55 N wells. Reflection high electron diffraction images and detailed measurements of the cathodoluminescence intensity, linewidth, and wavelength as a function of growth conditions are consistent with the presence of quantum dots.

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Enhanced deep ultraviolet luminescence from AlGaN quantum wells grown in the three-dimensional mode

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