Energy of antisite defects in chalcopyrites

Vyatcheslav A. Elyukhin; Sergey A. Nikishin; Henryk Temkin

doi:10.1021/cg034077l

Energy of antisite defects in chalcopyrites

Vyatcheslav A. Elyukhin, Sergey A. Nikishin, Henryk Temkin

Electrical and Computer Engineering

Research output: Contribution to journal › Article

1 Scopus citations

Abstract

The approach for the estimation of the antisite defect energy in the chalcopyrite compounds is developed. The energy of antisite defect is expressed as a function of the chalcopyrite - zinc blende transformation temperature. The energies of antisite defects in the CuInSe₂, CuInTe₂, AgInSe₂, ZnGeAs₂, ZnSnP₂, ZnSnAs₂, CdGeAs₂, and CdSnAs₂ chalcopyrite compounds are estimated. Conditions needed for the molecular beam epitaxy of the ordered and disordered ZnSnP₂ are considered.

Original language	English
Pages (from-to)	773-775
Number of pages	3
Journal	Crystal Growth and Design
Volume	3
Issue number	5
DOIs	https://doi.org/10.1021/cg034077l
State	Published - Sep 2003

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abstract = "The approach for the estimation of the antisite defect energy in the chalcopyrite compounds is developed. The energy of antisite defect is expressed as a function of the chalcopyrite - zinc blende transformation temperature. The energies of antisite defects in the CuInSe2, CuInTe2, AgInSe2, ZnGeAs2, ZnSnP2, ZnSnAs2, CdGeAs2, and CdSnAs2 chalcopyrite compounds are estimated. Conditions needed for the molecular beam epitaxy of the ordered and disordered ZnSnP2 are considered.",

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AU - Nikishin, Sergey A.

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AB - The approach for the estimation of the antisite defect energy in the chalcopyrite compounds is developed. The energy of antisite defect is expressed as a function of the chalcopyrite - zinc blende transformation temperature. The energies of antisite defects in the CuInSe2, CuInTe2, AgInSe2, ZnGeAs2, ZnSnP2, ZnSnAs2, CdGeAs2, and CdSnAs2 chalcopyrite compounds are estimated. Conditions needed for the molecular beam epitaxy of the ordered and disordered ZnSnP2 are considered.

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