TY - JOUR
T1 - Energy of antisite defects in chalcopyrites
AU - Elyukhin, Vyatcheslav A.
AU - Nikishin, Sergey A.
AU - Temkin, Henryk
PY - 2003/9
Y1 - 2003/9
N2 - The approach for the estimation of the antisite defect energy in the chalcopyrite compounds is developed. The energy of antisite defect is expressed as a function of the chalcopyrite - zinc blende transformation temperature. The energies of antisite defects in the CuInSe2, CuInTe2, AgInSe2, ZnGeAs2, ZnSnP2, ZnSnAs2, CdGeAs2, and CdSnAs2 chalcopyrite compounds are estimated. Conditions needed for the molecular beam epitaxy of the ordered and disordered ZnSnP2 are considered.
AB - The approach for the estimation of the antisite defect energy in the chalcopyrite compounds is developed. The energy of antisite defect is expressed as a function of the chalcopyrite - zinc blende transformation temperature. The energies of antisite defects in the CuInSe2, CuInTe2, AgInSe2, ZnGeAs2, ZnSnP2, ZnSnAs2, CdGeAs2, and CdSnAs2 chalcopyrite compounds are estimated. Conditions needed for the molecular beam epitaxy of the ordered and disordered ZnSnP2 are considered.
UR - http://www.scopus.com/inward/record.url?scp=0141851342&partnerID=8YFLogxK
U2 - 10.1021/cg034077l
DO - 10.1021/cg034077l
M3 - Article
AN - SCOPUS:0141851342
VL - 3
SP - 773
EP - 775
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 5
ER -