Energy of antisite defects in chalcopyrites

Vyatcheslav A. Elyukhin, Sergey A. Nikishin, Henryk Temkin

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The approach for the estimation of the antisite defect energy in the chalcopyrite compounds is developed. The energy of antisite defect is expressed as a function of the chalcopyrite - zinc blende transformation temperature. The energies of antisite defects in the CuInSe2, CuInTe2, AgInSe2, ZnGeAs2, ZnSnP2, ZnSnAs2, CdGeAs2, and CdSnAs2 chalcopyrite compounds are estimated. Conditions needed for the molecular beam epitaxy of the ordered and disordered ZnSnP2 are considered.

Original languageEnglish
Pages (from-to)773-775
Number of pages3
JournalCrystal Growth and Design
Volume3
Issue number5
DOIs
StatePublished - Sep 2003

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