Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

Q. Wang, R. Dahal, I. W. Feng, J. Y. Lin, H. X. Jiang, R. Hui

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Abstract

We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Fchtbauer-Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber's theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.

Original languageEnglish
Article number121106
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
StatePublished - Sep 19 2011

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