Abstract
We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Fchtbauer-Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber's theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.
Original language | English |
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Article number | 121106 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 12 |
DOIs | |
State | Published - Sep 19 2011 |