Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

Q. Wang; R. Dahal; I. W. Feng; J. Y. Lin; H. X. Jiang; R. Hui

doi:10.1063/1.3636418

Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

Q. Wang, R. Dahal, I. W. Feng, J. Y. Lin, H. X. Jiang, R. Hui

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Fchtbauer-Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber's theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.

Original language	English
Article number	121106
Journal	Applied Physics Letters
Volume	99
Issue number	12
DOIs	https://doi.org/10.1063/1.3636418
State	Published - Sep 19 2011

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@article{aab28a4275dc48dabfd175e74ad661ec,

title = "Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition",

abstract = "We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Fchtbauer-Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber's theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.",

author = "Q. Wang and R. Dahal and Feng, {I. W.} and Lin, {J. Y.} and Jiang, {H. X.} and R. Hui",

note = "Funding Information: This work is supported by NSF (Grant No. ECCS-0854619). Jiang and Lin gratefully acknowledge the support of Ed and Linda Whitacre Endowed Chair positions through the AT & T Foundation.",

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doi = "10.1063/1.3636418",

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TY - JOUR

T1 - Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

AU - Wang, Q.

AU - Dahal, R.

AU - Feng, I. W.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Hui, R.

N1 - Funding Information: This work is supported by NSF (Grant No. ECCS-0854619). Jiang and Lin gratefully acknowledge the support of Ed and Linda Whitacre Endowed Chair positions through the AT & T Foundation.

PY - 2011/9/19

Y1 - 2011/9/19

N2 - We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Fchtbauer-Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber's theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.

AB - We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Fchtbauer-Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber's theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.

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U2 - 10.1063/1.3636418

DO - 10.1063/1.3636418

M3 - Article

AN - SCOPUS:80053404464

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121106

ER -

Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

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