Electrothermal Simulation-Based Comparison of 4H-SiC pin, Schottky, and JBS Diodes Under High Current Density Pulsed Operation

Bejoy N Pushpakaran, Stephen Bayne, Aderinto A Ogunniyi

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	IEEE Transactions on Plasma Science
State	Published - 2016

Cite this

@article{6f8de7873a824e50ad549d8f288b84ff,

title = "Electrothermal Simulation-Based Comparison of 4H-SiC pin, Schottky, and JBS Diodes Under High Current Density Pulsed Operation",

author = "Pushpakaran, {Bejoy N} and Stephen Bayne and Ogunniyi, {Aderinto A}",

year = "2016",

language = "English",

journal = "IEEE Transactions on Plasma Science",

publisher = "IEEE",

}