Electrothermal Simulation-Based Comparison of 4H-SiC pin, Schottky, and JBS Diodes Under High Current Density Pulsed Operation

Bejoy N Pushpakaran, Stephen Bayne, Aderinto A Ogunniyi

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	68--75
Journal	IEEE Transactions on Plasma Science
State	Published - 2017

Cite this

@article{dbf1bf4298154a26b5f98a2d150ed6d4,

title = "Electrothermal Simulation-Based Comparison of 4H-SiC pin, Schottky, and JBS Diodes Under High Current Density Pulsed Operation",

author = "Pushpakaran, {Bejoy N} and Stephen Bayne and Ogunniyi, {Aderinto A}",

year = "2017",

language = "English",

pages = "68----75",

journal = "IEEE Transactions on Plasma Science",

publisher = "IEEE",

}