TY - JOUR
T1 - Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n, Schottky, and JBS Diodes under High Current Density Pulsed Operation
AU - Pushpakaran, Bejoy N.
AU - Bayne, Stephen B.
AU - Ogunniyi, Aderinto A.
N1 - Publisher Copyright:
© 1973-2012 IEEE.
PY - 2017/1
Y1 - 2017/1
N2 - Pulsed power applications are characterized by very high instantaneous power due to the high voltage and current involved. Power diodes used as a closing switch in pulsed power circuits must be able to withstand the high current operation well above the continuous device rating, for a transient duration. Due to the superior electrothermal properties of wide bandgap Silicon Carbide (SiC) material, it is feasible to develop high Blocking Voltage (BV) Schottky and Junction Barrier Schottky (JBS) diodes besides p-i-n rectifiers. In order to evaluate the device performance under high current density pulsed operation, 2-D models of SiC p-i-n, Schottky, and JBS diodes rated for 3.3-kV BV and 100 A/cm2 current density were developed using Silvaco ATLAS TCAD software. The diode structures were simulated electrothermally to study the device behavior and compare the performance under high current density pulsed operation. The power dissipation and the lattice temperature profile of the SiC diodes were analyzed to compare the magnitude of heat loss and formation of thermal hot spot in the diode structure to predict the suitability of the device for pulsed power applications.
AB - Pulsed power applications are characterized by very high instantaneous power due to the high voltage and current involved. Power diodes used as a closing switch in pulsed power circuits must be able to withstand the high current operation well above the continuous device rating, for a transient duration. Due to the superior electrothermal properties of wide bandgap Silicon Carbide (SiC) material, it is feasible to develop high Blocking Voltage (BV) Schottky and Junction Barrier Schottky (JBS) diodes besides p-i-n rectifiers. In order to evaluate the device performance under high current density pulsed operation, 2-D models of SiC p-i-n, Schottky, and JBS diodes rated for 3.3-kV BV and 100 A/cm2 current density were developed using Silvaco ATLAS TCAD software. The diode structures were simulated electrothermally to study the device behavior and compare the performance under high current density pulsed operation. The power dissipation and the lattice temperature profile of the SiC diodes were analyzed to compare the magnitude of heat loss and formation of thermal hot spot in the diode structure to predict the suitability of the device for pulsed power applications.
KW - High current density
KW - lattice heating
KW - pulsed operation
KW - silicon carbide (SiC)
KW - silvaco TCAD
KW - thermal hot spot
UR - http://www.scopus.com/inward/record.url?scp=85007281172&partnerID=8YFLogxK
U2 - 10.1109/TPS.2016.2636214
DO - 10.1109/TPS.2016.2636214
M3 - Article
AN - SCOPUS:85007281172
SN - 0093-3813
VL - 45
SP - 68
EP - 75
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 1
M1 - 7792177
ER -