Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n, Schottky, and JBS Diodes under High Current Density Pulsed Operation

Bejoy N. Pushpakaran, Stephen B. Bayne, Aderinto A. Ogunniyi

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Pulsed power applications are characterized by very high instantaneous power due to the high voltage and current involved. Power diodes used as a closing switch in pulsed power circuits must be able to withstand the high current operation well above the continuous device rating, for a transient duration. Due to the superior electrothermal properties of wide bandgap Silicon Carbide (SiC) material, it is feasible to develop high Blocking Voltage (BV) Schottky and Junction Barrier Schottky (JBS) diodes besides p-i-n rectifiers. In order to evaluate the device performance under high current density pulsed operation, 2-D models of SiC p-i-n, Schottky, and JBS diodes rated for 3.3-kV BV and 100 A/cm2 current density were developed using Silvaco ATLAS TCAD software. The diode structures were simulated electrothermally to study the device behavior and compare the performance under high current density pulsed operation. The power dissipation and the lattice temperature profile of the SiC diodes were analyzed to compare the magnitude of heat loss and formation of thermal hot spot in the diode structure to predict the suitability of the device for pulsed power applications.

Original languageEnglish
Article number7792177
Pages (from-to)68-75
Number of pages8
JournalIEEE Transactions on Plasma Science
Volume45
Issue number1
DOIs
StatePublished - Jan 2017

Keywords

  • High current density
  • lattice heating
  • pulsed operation
  • silicon carbide (SiC)
  • silvaco TCAD
  • thermal hot spot

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