Electronic topological transition and semiconductor-to-metal conversion of Bi2Te3 under high pressure

Junkai Zhang, Cailong Liu, Xin Zhang, Feng Ke, Yonghao Han, Gang Peng, Yanzhang Ma, Chunxiao Gao

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

Accurate high pressure in situ Hall-effect and temperature dependent electrical resistivity measurements have been carried out on Bi 2Te3, a topological insulator. The pressure dependent electrical resistivity, Hall coefficient, carrier concentration, and mobility show the abnormal inflection points at 8, 12, and 17.8 GPa, indicating that the pressure-induced structural phase transitions of Bi2Te3 can result in a series of changes in the carrier transport behavior. In addition, the Hall coefficient shows a significant discontinuous change at 4 GPa, which is caused by the electronic topological transition. A sign inversion of Hall coefficient from positive to negative is found around 8 GPa. Furthermore, the temperature dependent electrical resistivity shows that the sample undergoes a semiconductor-to-metal conversion around 9.2 GPa, indicating that the insulating gap of Bi2Te3 becomes closed at this pressure. As the metallization occurs in the sample, the topological property of Bi2Te3 disappears.

Original languageEnglish
Article number052102
JournalApplied Physics Letters
Volume103
Issue number5
DOIs
StatePublished - Jul 29 2013

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