Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs1-x Px, Gax In1-x As, Gax Al1-xAs, Gax In1-x P, and GaSb1-xPx are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp3s* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb1-xPx. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs1-xPx, of moderate importance for GaxIn1-xAs and GaxAl1-xAs, and relatively large for GaxIn1-xP. However, such effects are found to be significant for GaSb1-xPx, with this alloy predicted to be in the strong scattering regime.
- Electronic structure
- coherent potential approximation
- disordered alloys
- semiconductor alloys