TY - JOUR
T1 - Electronic structure of ternary semiconductor alloys
T2 - CPA calculations using sp3s* bandstructures
AU - Shen, Yu Tang
AU - Myles, Charles W.
N1 - Funding Information:
Acknowledgements-We thank the National ScienceF oun-dation for a grant (ECS-84-07185w) hich partially sup-portedt his work and TexasT ech Universityf or a granto f computetri met o performt hesec alculationsY. .-T.S. thanks TexasT echU niversityf or thea wardo f an OdettaG reera nd J. Fred Bucy Scholarshipi n Applied Physics.
PY - 1987
Y1 - 1987
N2 - Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs1-x Px, Gax In1-x As, Gax Al1-xAs, Gax In1-x P, and GaSb1-xPx are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp3s* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb1-xPx. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs1-xPx, of moderate importance for GaxIn1-xAs and GaxAl1-xAs, and relatively large for GaxIn1-xP. However, such effects are found to be significant for GaSb1-xPx, with this alloy predicted to be in the strong scattering regime.
AB - Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs1-x Px, Gax In1-x As, Gax Al1-xAs, Gax In1-x P, and GaSb1-xPx are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp3s* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb1-xPx. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs1-xPx, of moderate importance for GaxIn1-xAs and GaxAl1-xAs, and relatively large for GaxIn1-xP. However, such effects are found to be significant for GaSb1-xPx, with this alloy predicted to be in the strong scattering regime.
KW - Electronic structure
KW - coherent potential approximation
KW - disordered alloys
KW - semiconductor alloys
UR - http://www.scopus.com/inward/record.url?scp=0023592809&partnerID=8YFLogxK
U2 - 10.1016/0022-3697(87)90003-5
DO - 10.1016/0022-3697(87)90003-5
M3 - Article
AN - SCOPUS:0023592809
VL - 48
SP - 1173
EP - 1184
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 12
ER -