Electronic structure of ternary semiconductor alloys: CPA calculations using sp3s* bandstructures

Yu Tang Shen, Charles W. Myles

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs1-x Px, Gax In1-x As, Gax Al1-xAs, Gax In1-x P, and GaSb1-xPx are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp3s* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb1-xPx. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs1-xPx, of moderate importance for GaxIn1-xAs and GaxAl1-xAs, and relatively large for GaxIn1-xP. However, such effects are found to be significant for GaSb1-xPx, with this alloy predicted to be in the strong scattering regime.

Original languageEnglish
Pages (from-to)1173-1184
Number of pages12
JournalJournal of Physics and Chemistry of Solids
Issue number12
StatePublished - 1987


  • Electronic structure
  • coherent potential approximation
  • disordered alloys
  • semiconductor alloys


Dive into the research topics of 'Electronic structure of ternary semiconductor alloys: CPA calculations using sp3s* bandstructures'. Together they form a unique fingerprint.

Cite this