Electronic structure-dependent magneto-optical Raman effect in atomically thin WS2

Luojun Du, Zhiyan Jia, Qian Zhang, Anmin Zhang, Tingting Zhang, Rui He, Rong Yang, Dongxia Shi, Yugui Yao, Jianyong Xiang, Guangyu Zhang, Qingming Zhang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Magneto-optical effect, such as Faraday rotation, magneto-optical Kerr and Zeeman effect, plays a fundamental role and has found extensive applications in condensed-matter physics. Two-dimensional transition metal dichalcogenides provide us an unprecedented platform for exploring abundant magneto-optical phenomena. Here we report such experiments that demonstrate the band structure-dependent magneto-optical Raman effect in atomically thin WS2. Our experiments in conjunction with theoretical calculations uncover that the direct to indirect transition leads to distinct magneto-optical Raman effect between monolayer and bilayer/trilayer. We further quantitatively determine the optical mobility of carriers at different critical points of conduction band (K and Q points). In addition, our measurements reveal that not only the particular single-phonon mode A1g(Γ) but also multiple phonon replica and phonons at the edges of Brillouin zone display electronic structure-dependent gigantic magneto-optical Raman effect. Our work establishes a firm basis for benchmarking a new microscopic quantum Raman scattering theory, and paves a way towards novel magneto-optical applications based on 2D semiconductors.

Original languageEnglish
Article number035028
Journal2D Materials
Issue number3
StatePublished - Jun 4 2018


  • WS
  • electronic structure
  • magneto-optical Raman effect
  • optical mobility


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