Electronic ranian scattering from Mg-doped wurtzite GaN

K. T. Tsen; C. Koch; Y. Chen; H. Morkoc; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1557/PROC-595-F99W11.42

Electronic ranian scattering from Mg-doped wurtzite GaN

K. T. Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article

Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r') observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E_b = 172 ±IQmeV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Original language	English
Pages (from-to)	W11421-W11426
Journal	Materials Research Society Symposium - Proceedings
Volume	595
DOIs	https://doi.org/10.1557/PROC-595-F99W11.42
State	Published - 2000

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Tsen, K. T., Koch, C., Chen, Y., Morkoc, H., Li, J., Lin, J. Y., & Jiang, H. X. (2000). Electronic ranian scattering from Mg-doped wurtzite GaN. Materials Research Society Symposium - Proceedings, 595, W11421-W11426. https://doi.org/10.1557/PROC-595-F99W11.42

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abstract = "Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r') observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb = 172 ±IQmeV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.",

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T1 - Electronic ranian scattering from Mg-doped wurtzite GaN

AU - Tsen, K. T.

AU - Koch, C.

AU - Chen, Y.

AU - Morkoc, H.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000

Y1 - 2000

N2 - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r') observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb = 172 ±IQmeV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

AB - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r') observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb = 172 ±IQmeV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

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