Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM = 15c«r') observed for the first time at around 841cr' is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb = 172 ±IQmeV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2000|