Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm-1) observed for the first time at around 841cm-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.
|Pages (from-to)||W11.42.1 - W11.42.6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2000|
|Event||The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA|
Duration: Nov 28 1999 → Dec 3 1999