Electronic Raman scattering from Mg-doped wurtzite GaN

K. T. Tsen; C. Koch; Y. Chen; H. Morkoc; J. Li; J. Y. Lin; H. X. Jiang

Electronic Raman scattering from Mg-doped wurtzite GaN

K. T. Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm^-1) observed for the first time at around 841cm^-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be E_b ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Original language	English
Pages (from-to)	W11.42.1 - W11.42.6
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 28 1999 → Dec 3 1999

Cite this

@article{afa028bef4444fbfa8da4ef9ef9ce226,

title = "Electronic Raman scattering from Mg-doped wurtzite GaN",

abstract = "Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm-1) observed for the first time at around 841cm-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.",

author = "Tsen, {K. T.} and C. Koch and Y. Chen and H. Morkoc and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2000",

language = "English",

volume = "595",

pages = "W11.42.1 -- W11.42.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Electronic Raman scattering from Mg-doped wurtzite GaN

AU - Tsen, K. T.

AU - Koch, C.

AU - Chen, Y.

AU - Morkoc, H.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000

Y1 - 2000

N2 - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm-1) observed for the first time at around 841cm-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

AB - Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm-1) observed for the first time at around 841cm-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. From the analysis of the temperature-dependence of this electronic Raman scattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

UR - http://www.scopus.com/inward/record.url?scp=0033720115&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033720115

SN - 0272-9172

VL - 595

SP - W11.42.1 - W11.42.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -

Electronic Raman scattering from Mg-doped wurtzite GaN

Abstract

Other files and links

Fingerprint

Cite this