Electron mobility and drift velocity calculations for bulk GaSb material

P. Damayanthi; R. P. Joshi; J. A. McAdoo

doi:10.1063/1.371479

Electron mobility and drift velocity calculations for bulk GaSb material

P. Damayanthi, R. P. Joshi, J. A. McAdoo

Electrical and Computer Engineering

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13 Scopus citations

Abstract

Electron mobility and drift velocity simulation results are presented for bulk GaSb based on a many-valley, anisotropic Monte Carlo model. Our mobility results at 300 K are in good agreement with available experimental data. Values close to the room temperature GaAs mobility have been predicted. Transient drift velocities are demonstrated to be higher than for GaAs and the negative differential velocity regime is shown to occur at much lower electric fields of about 1 kV/cm. The material could be useful as a low voltage oscillator or in high speed photodetection.

Original language	English
Pages (from-to)	5060-5064
Number of pages	5
Journal	Journal of Applied Physics
Volume	86
Issue number	9
DOIs	https://doi.org/10.1063/1.371479
State	Published - Nov 1 1999

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10.1063/1.371479

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N2 - Electron mobility and drift velocity simulation results are presented for bulk GaSb based on a many-valley, anisotropic Monte Carlo model. Our mobility results at 300 K are in good agreement with available experimental data. Values close to the room temperature GaAs mobility have been predicted. Transient drift velocities are demonstrated to be higher than for GaAs and the negative differential velocity regime is shown to occur at much lower electric fields of about 1 kV/cm. The material could be useful as a low voltage oscillator or in high speed photodetection.

AB - Electron mobility and drift velocity simulation results are presented for bulk GaSb based on a many-valley, anisotropic Monte Carlo model. Our mobility results at 300 K are in good agreement with available experimental data. Values close to the room temperature GaAs mobility have been predicted. Transient drift velocities are demonstrated to be higher than for GaAs and the negative differential velocity regime is shown to occur at much lower electric fields of about 1 kV/cm. The material could be useful as a low voltage oscillator or in high speed photodetection.

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Electron mobility and drift velocity calculations for bulk GaSb material

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