Electroluminescent properties of erbium-doped III-N light-emitting diodes

J. M. Zavada, S. X. Jin, N. Nepal, J. Y. Lin, H. X. Jiang, P. Chow, B. Hertog

Research output: Contribution to journalArticlepeer-review

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The synthesis of Er-doped III-N double heterostructure light-emitting diodes (LED) and their electroluminescence (EL) properties were discussed. The device structures were grown through a combination of metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) on c-plane sapphire substrates. It was observed that at cryogenic temperatures, the emission lines increased in intensity and possessed a narrower linewidth. It was found that the power output of the brightest LED is 2.5 W/m 2 at 300 K.

Original languageEnglish
Pages (from-to)1061-1063
Number of pages3
JournalApplied Physics Letters
Issue number7
StatePublished - Feb 16 2004


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