Abstract
The synthesis of Er-doped III-N double heterostructure light-emitting diodes (LED) and their electroluminescence (EL) properties were discussed. The device structures were grown through a combination of metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) on c-plane sapphire substrates. It was observed that at cryogenic temperatures, the emission lines increased in intensity and possessed a narrower linewidth. It was found that the power output of the brightest LED is 2.5 W/m 2 at 300 K.
Original language | English |
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Pages (from-to) | 1061-1063 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 7 |
DOIs | |
State | Published - Feb 16 2004 |