Electro-thermal transient simulation of silicon carbide power MOSFET

Bejoy N. Pushpakaran; Stephen B. Bayne; Aderinto A. Ogunniyi

doi:10.1109/PPC.2013.6627596

Electro-thermal transient simulation of silicon carbide power MOSFET

Bejoy N. Pushpakaran, Stephen B. Bayne, Aderinto A. Ogunniyi

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm². The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco

Original language	English
Title of host publication	2013 19th IEEE Pulsed Power Conference, PPC 2013
DOIs	https://doi.org/10.1109/PPC.2013.6627596
State	Published - 2013
Event	2013 19th IEEE Pulsed Power Conference, PPC 2013 - San Francisco, CA, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Digest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference	2013 19th IEEE Pulsed Power Conference, PPC 2013
Country	United States
City	San Francisco, CA
Period	06/16/13 → 06/21/13

Access to Document

10.1109/PPC.2013.6627596

Link to publication in Scopus

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Cite this

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title = "Electro-thermal transient simulation of silicon carbide power MOSFET",

abstract = "This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco",

author = "Pushpakaran, {Bejoy N.} and Bayne, {Stephen B.} and Ogunniyi, {Aderinto A.}",

year = "2013",

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Pushpakaran, BN, Bayne, SB & Ogunniyi, AA 2013, Electro-thermal transient simulation of silicon carbide power MOSFET. in 2013 19th IEEE Pulsed Power Conference, PPC 2013., 6627596, Digest of Technical Papers-IEEE International Pulsed Power Conference, 2013 19th IEEE Pulsed Power Conference, PPC 2013, San Francisco, CA, United States, 06/16/13. https://doi.org/10.1109/PPC.2013.6627596

Electro-thermal transient simulation of silicon carbide power MOSFET. / Pushpakaran, Bejoy N.; Bayne, Stephen B.; Ogunniyi, Aderinto A.

2013 19th IEEE Pulsed Power Conference, PPC 2013. 2013. 6627596 (Digest of Technical Papers-IEEE International Pulsed Power Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Bayne, Stephen B.

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N2 - This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco

AB - This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco

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