Electro-thermal transient simulation of silicon carbide power MOSFET

Bejoy N. Pushpakaran, Stephen B. Bayne, Aderinto A. Ogunniyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco

Original languageEnglish
Title of host publication2013 19th IEEE Pulsed Power Conference, PPC 2013
DOIs
StatePublished - 2013
Event2013 19th IEEE Pulsed Power Conference, PPC 2013 - San Francisco, CA, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference

Conference

Conference2013 19th IEEE Pulsed Power Conference, PPC 2013
CountryUnited States
CitySan Francisco, CA
Period06/16/1306/21/13

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