TY - GEN
T1 - Electro-thermal transient simulation of silicon carbide power MOSFET
AU - Pushpakaran, Bejoy N.
AU - Bayne, Stephen B.
AU - Ogunniyi, Aderinto A.
PY - 2013
Y1 - 2013
N2 - This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco
AB - This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco
UR - http://www.scopus.com/inward/record.url?scp=84888581128&partnerID=8YFLogxK
U2 - 10.1109/PPC.2013.6627596
DO - 10.1109/PPC.2013.6627596
M3 - Conference contribution
AN - SCOPUS:84888581128
SN - 9781467351676
T3 - Digest of Technical Papers-IEEE International Pulsed Power Conference
BT - 2013 19th IEEE Pulsed Power Conference, PPC 2013
Y2 - 16 June 2013 through 21 June 2013
ER -