Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions

Leonardo M. Hillkirk; Allen R. Hefner; Robert W. Dutton; Stephen B. Bayne; Heather O'Brien

doi:10.1007/978-3-211-72861-1_43

Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions

Leonardo M. Hillkirk, Allen R. Hefner, Robert W. Dutton, Stephen B. Bayne, Heather O'Brien

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density has been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI ^* [1]. The convergence problems normally associated with Technology Computer-Aided Design (TCAD) simulations of SiC bipolar devices were overcome without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electrical and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.

Original language	English
Title of host publication	2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Publisher	Springer-Verlag Wien
Pages	181-184
Number of pages	4
ISBN (Print)	9783211728604
DOIs	https://doi.org/10.1007/978-3-211-72861-1_43
State	Published - 2007
Event	12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria Duration: Sep 25 2007 → Sep 27 2007

Publication series

Name	2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Conference

Conference	12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Country	Austria
City	Vienna
Period	09/25/07 → 09/27/07

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Hillkirk, L. M., Hefner, A. R., Dutton, R. W., Bayne, S. B., & O'Brien, H. (2007). Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 181-184). (2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_43

Hillkirk, Leonardo M. ; Hefner, Allen R. ; Dutton, Robert W. ; Bayne, Stephen B. ; O'Brien, Heather. / Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions. 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. Springer-Verlag Wien, 2007. pp. 181-184 (2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007).

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title = "Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions",

abstract = "An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density has been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI * [1]. The convergence problems normally associated with Technology Computer-Aided Design (TCAD) simulations of SiC bipolar devices were overcome without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electrical and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.",

author = "Hillkirk, {Leonardo M.} and Hefner, {Allen R.} and Dutton, {Robert W.} and Bayne, {Stephen B.} and Heather O'Brien",

year = "2007",

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isbn = "9783211728604",

series = "2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007",

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Hillkirk, LM, Hefner, AR, Dutton, RW, Bayne, SB & O'Brien, H 2007, Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions. in 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, Springer-Verlag Wien, pp. 181-184, 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, Vienna, Austria, 09/25/07. https://doi.org/10.1007/978-3-211-72861-1_43

Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions. / Hillkirk, Leonardo M.; Hefner, Allen R.; Dutton, Robert W.; Bayne, Stephen B.; O'Brien, Heather.

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. Springer-Verlag Wien, 2007. p. 181-184 (2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions

AU - Hillkirk, Leonardo M.

AU - Hefner, Allen R.

AU - Dutton, Robert W.

AU - Bayne, Stephen B.

AU - O'Brien, Heather

PY - 2007

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N2 - An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density has been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI * [1]. The convergence problems normally associated with Technology Computer-Aided Design (TCAD) simulations of SiC bipolar devices were overcome without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electrical and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.

AB - An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density has been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI * [1]. The convergence problems normally associated with Technology Computer-Aided Design (TCAD) simulations of SiC bipolar devices were overcome without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electrical and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.

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Hillkirk LM, Hefner AR, Dutton RW, Bayne SB, O'Brien H. Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007. Springer-Verlag Wien. 2007. p. 181-184. (2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007). https://doi.org/10.1007/978-3-211-72861-1_43