TY - GEN
T1 - Electro-Thermal, transient, mixed-mode 2D simulation study of SiC power thyristors operating under pulsed-power conditions
AU - Hillkirk, Leonardo M.
AU - Hefner, Allen R.
AU - Dutton, Robert W.
AU - Bayne, Stephen B.
AU - O'Brien, Heather
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density has been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI * [1]. The convergence problems normally associated with Technology Computer-Aided Design (TCAD) simulations of SiC bipolar devices were overcome without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electrical and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.
AB - An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density has been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI * [1]. The convergence problems normally associated with Technology Computer-Aided Design (TCAD) simulations of SiC bipolar devices were overcome without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electrical and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.
UR - http://www.scopus.com/inward/record.url?scp=44949183227&partnerID=8YFLogxK
U2 - 10.1007/978-3-211-72861-1_43
DO - 10.1007/978-3-211-72861-1_43
M3 - Conference contribution
AN - SCOPUS:44949183227
SN - 9783211728604
T3 - 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
SP - 181
EP - 184
BT - 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
PB - Springer-Verlag Wien
Y2 - 25 September 2007 through 27 September 2007
ER -