Electro-thermal TCAD model for 22 kV silicon carbide IGBTs

Miguel Hinojosa, Aderinto Ogunniyi, Stephen Bayne, Edward van Brunt, Sei Hyung Ryu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This paper presents the current progress in the development of an electro-thermal numerical model for 22 kV 4H-silicon carbide IGBTs. This effort involved the creation of a TCAD model based on doping profiles and structural layers to simulate the steady-state and switching characteristics of recently-fabricated experimental devices. The technical challenge of creating this high voltage SiC IGBT model was incorporating semiconductor equations with sub-models representing carrier mobility, generation, recombination, and lattice heat flow effects with parameters conditioned for 4H-silicon carbide material. Simulations of the steady-state and switching characteristics were performed and later verified with laboratory measurements for an Ntype SiC IGBT rated for 22 kV with an active area of 0.37 cm2and a drift region of 180 μm.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2015
EditorsFabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Roberta Nipoti, Danilo Crippa, Mario Saggio
PublisherTrans Tech Publications Ltd
Pages949-953
Number of pages5
ISBN (Print)9783035710427
DOIs
StatePublished - 2016
Event16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
Duration: Oct 4 2015Oct 9 2015

Publication series

NameMaterials Science Forum
Volume858
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
CountryItaly
CitySicily
Period10/4/1510/9/15

Keywords

  • 4H-SiC
  • High voltage
  • IGBT
  • Pulsed power switch
  • Silicon carbide
  • TCAD simulation

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  • Cite this

    Hinojosa, M., Ogunniyi, A., Bayne, S., van Brunt, E., & Ryu, S. H. (2016). Electro-thermal TCAD model for 22 kV silicon carbide IGBTs. In F. Roccaforte, F. Giannazzo, F. La Via, R. Nipoti, D. Crippa, & M. Saggio (Eds.), Silicon Carbide and Related Materials 2015 (pp. 949-953). (Materials Science Forum; Vol. 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.949