@inproceedings{19993762b79b47289da4aa0b47812648,
title = "Electro-thermal TCAD model for 22 kV silicon carbide IGBTs",
abstract = "This paper presents the current progress in the development of an electro-thermal numerical model for 22 kV 4H-silicon carbide IGBTs. This effort involved the creation of a TCAD model based on doping profiles and structural layers to simulate the steady-state and switching characteristics of recently-fabricated experimental devices. The technical challenge of creating this high voltage SiC IGBT model was incorporating semiconductor equations with sub-models representing carrier mobility, generation, recombination, and lattice heat flow effects with parameters conditioned for 4H-silicon carbide material. Simulations of the steady-state and switching characteristics were performed and later verified with laboratory measurements for an Ntype SiC IGBT rated for 22 kV with an active area of 0.37 cm2and a drift region of 180 μm.",
keywords = "4H-SiC, High voltage, IGBT, Pulsed power switch, Silicon carbide, TCAD simulation",
author = "Miguel Hinojosa and Aderinto Ogunniyi and Stephen Bayne and {van Brunt}, Edward and Ryu, {Sei Hyung}",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.949",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "949--953",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}