Abstract
We carried out the accurate in situ Hall-effect measurements, the temperature dependence of electrical resistivity measurements and the first-principles calculations in SnO under high pressure. The results of Hall-effect measurements display the carrier transport behavior of SnO under pressure, which indicates that SnO undergoes a carrier-type inversion around 1.3 GPa and an underlying phase transition at 2-3 GPa. In addition, the temperature dependence of electrical resistivity shows that SnO undergoes a semiconductor-to-metal transition around 5 GPa. The calculated band structures based on the first-principles method illustrate that the indirect band gap of SnO vanishes around 4 GPa. In particular, the results of total and partial density of states indicate that the closure of the indirect fundamental gap is mostly attributed to Sn-5s and 5p states hybridized with O-2p states at the Fermi level.
Original language | English |
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Pages (from-to) | 20710-20715 |
Number of pages | 6 |
Journal | Journal of Physical Chemistry C |
Volume | 115 |
Issue number | 42 |
DOIs | |
State | Published - Oct 27 2011 |