Electrical transport properties of SnO under high pressure

Junkai Zhang, Yonghao Han, Cailong Liu, Wanbin Ren, Yan Li, Qinglin Wang, Ningning Su, Yuqiang Li, Boheng Ma, Yanzhang Ma, Chunxiao Gao

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


We carried out the accurate in situ Hall-effect measurements, the temperature dependence of electrical resistivity measurements and the first-principles calculations in SnO under high pressure. The results of Hall-effect measurements display the carrier transport behavior of SnO under pressure, which indicates that SnO undergoes a carrier-type inversion around 1.3 GPa and an underlying phase transition at 2-3 GPa. In addition, the temperature dependence of electrical resistivity shows that SnO undergoes a semiconductor-to-metal transition around 5 GPa. The calculated band structures based on the first-principles method illustrate that the indirect band gap of SnO vanishes around 4 GPa. In particular, the results of total and partial density of states indicate that the closure of the indirect fundamental gap is mostly attributed to Sn-5s and 5p states hybridized with O-2p states at the Fermi level.

Original languageEnglish
Pages (from-to)20710-20715
Number of pages6
JournalJournal of Physical Chemistry C
Issue number42
StatePublished - Oct 27 2011


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