Electrical transport properties of Si-doped hexagonal boron nitride epilayers

S. Majety; T. C. Doan; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4860949

Electrical transport properties of Si-doped hexagonal boron nitride epilayers

S. Majety, T. C. Doan, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 ·cm, electron mobility of μ ∼ 48 cm ²/V·s and concentration of n ∼ 1 × 10¹⁶ cm^-3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.

Original language	English
Article number	122116
Journal	AIP Advances
Volume	3
Issue number	12
DOIs	https://doi.org/10.1063/1.4860949
State	Published - Dec 2013

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title = "Electrical transport properties of Si-doped hexagonal boron nitride epilayers",

abstract = "The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 ·cm, electron mobility of μ ∼ 48 cm 2/V·s and concentration of n ∼ 1 × 1016 cm-3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.",

author = "S. Majety and Doan, {T. C.} and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The effort on the electrical transport measurements is supported by DOE (DE-FG02-09ER46552) and the epi-growth and doping efforts are supported by NSF (DMR-1206652). Jiang and Lin are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre Endowed chairs.",

year = "2013",

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doi = "10.1063/1.4860949",

language = "English",

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journal = "AIP Advances",

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T1 - Electrical transport properties of Si-doped hexagonal boron nitride epilayers

AU - Majety, S.

AU - Doan, T. C.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The effort on the electrical transport measurements is supported by DOE (DE-FG02-09ER46552) and the epi-growth and doping efforts are supported by NSF (DMR-1206652). Jiang and Lin are grateful to the AT&T Foundation for the support of Ed Whitacre and Linda Whitacre Endowed chairs.

PY - 2013/12

Y1 - 2013/12

N2 - The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 ·cm, electron mobility of μ ∼ 48 cm 2/V·s and concentration of n ∼ 1 × 1016 cm-3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.

AB - The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 ·cm, electron mobility of μ ∼ 48 cm 2/V·s and concentration of n ∼ 1 × 1016 cm-3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.

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DO - 10.1063/1.4860949

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JF - AIP Advances

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M1 - 122116

ER -

Electrical transport properties of Si-doped hexagonal boron nitride epilayers

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