Electrical transport properties of hexagonal boron nitride epilayers

Samuel Grenadier, Avisek Maity, Jing Li, Jingyu Lin, Hongxing Jiang

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Due to its exceptional physical properties, including ultrahigh energy band gap, layered structure, strong optical transitions near the band-edge, high electrical resistivity, and large thermal neutron capture cross-section of the Boron isotope, Boron-10 (10B), hexagonal boron nitride (h-BN) has attracted a great deal of attention recently for its potential applications in deep UV (DUV) optoelectronics, single photon emitters and solid-state neutron detection. This chapter provides a brief overview on recent progresses made by the authors in the growth of freestanding h-BN epilayers with large thicknesses (up to 200 μm), understanding of vertical and lateral transport properties and realization of h-BN thermal neutron detectors with unprecedented detection efficiencies among solid-state detectors. These results have also identified basic material parameters which are key to further improve the transport properties and performance of h-BN devices. It is anticipated that further advances in material growth and novel device architecture designs will bring the developed h-BN neutron detector technology to the next level of maturity.

Original languageEnglish
Title of host publicationUltrawide Bandgap Semiconductors
EditorsYuji Zhao, Zetian Mi
PublisherAcademic Press Inc.
Pages393-454
Number of pages62
ISBN (Print)9780128228708
DOIs
StatePublished - Jan 2021

Publication series

NameSemiconductors and Semimetals
Volume107
ISSN (Print)0080-8784

Keywords

  • Boron nitride
  • Defects in semiconductors
  • Hexagonal boron nitride
  • Neutron detectors
  • Solid-state neutron detectors
  • Transport properties
  • Wide bandgap semiconductors

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