TY - JOUR
T1 - Electrical property and phase transition of CdSe under high pressure
AU - He, Chunyuan
AU - Gao, Chunxiao
AU - Ma, Yanzhang
AU - Liu, Bingguo
AU - Li, Ming
AU - Huang, Xiaowei
AU - Hao, Aimin
AU - Yu, Cuiling
AU - Zhang, Dongmei
AU - Liu, Hongwu
AU - Zou, Guangtian
N1 - Funding Information:
This work is supported by the National Natural Science Foundation of China (Grant nos. 40473034, 10574055, and 50532020), the National Basic Research Program of China (Grant no. 2005CB724404), the National Science Foundation of the United States (Grant no. DMR-0619215), and the PCSIRT (IRT0625).
PY - 2008/9
Y1 - 2008/9
N2 - In situ electrical resistivity measurement of CdSe was performed under high pressure and moderate temperature using a diamond anvil cell equipped with a microcircuit. With the pressure increasing, a sharp drop in resistivity of over two orders of magnitude was observed at about 2.6 GPa, it was caused by the transition to the rock-salt CdSe. After that, the resistivity decreased linearly with pressure. However, in different pressure range, the decreasing degree was obviously different. This attributed to the different electron structures. By fitting to the curve of pressure dependence of resistivity in different pressure range, the relationship of the band gap to pressure was given and the metallization pressure was speculated to be in the range of 70-100 GPa. The temperature dependence of resistivity showed that in the experimental temperature and pressure range the resistivity had a positive temperature coefficient.
AB - In situ electrical resistivity measurement of CdSe was performed under high pressure and moderate temperature using a diamond anvil cell equipped with a microcircuit. With the pressure increasing, a sharp drop in resistivity of over two orders of magnitude was observed at about 2.6 GPa, it was caused by the transition to the rock-salt CdSe. After that, the resistivity decreased linearly with pressure. However, in different pressure range, the decreasing degree was obviously different. This attributed to the different electron structures. By fitting to the curve of pressure dependence of resistivity in different pressure range, the relationship of the band gap to pressure was given and the metallization pressure was speculated to be in the range of 70-100 GPa. The temperature dependence of resistivity showed that in the experimental temperature and pressure range the resistivity had a positive temperature coefficient.
KW - A. Semiconductors
KW - C. High pressure
KW - D. Electrical properties
UR - http://www.scopus.com/inward/record.url?scp=50949110000&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2008.04.001
DO - 10.1016/j.jpcs.2008.04.001
M3 - Article
AN - SCOPUS:50949110000
SN - 0022-3697
VL - 69
SP - 2227
EP - 2229
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 9
ER -