Electrical property and phase transition of CdSe under high pressure

Chunyuan He, Chunxiao Gao, Yanzhang Ma, Bingguo Liu, Ming Li, Xiaowei Huang, Aimin Hao, Cuiling Yu, Dongmei Zhang, Hongwu Liu, Guangtian Zou

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In situ electrical resistivity measurement of CdSe was performed under high pressure and moderate temperature using a diamond anvil cell equipped with a microcircuit. With the pressure increasing, a sharp drop in resistivity of over two orders of magnitude was observed at about 2.6 GPa, it was caused by the transition to the rock-salt CdSe. After that, the resistivity decreased linearly with pressure. However, in different pressure range, the decreasing degree was obviously different. This attributed to the different electron structures. By fitting to the curve of pressure dependence of resistivity in different pressure range, the relationship of the band gap to pressure was given and the metallization pressure was speculated to be in the range of 70-100 GPa. The temperature dependence of resistivity showed that in the experimental temperature and pressure range the resistivity had a positive temperature coefficient.

Original languageEnglish
Pages (from-to)2227-2229
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number9
DOIs
StatePublished - Sep 2008

Keywords

  • A. Semiconductors
  • C. High pressure
  • D. Electrical properties

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