Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N

V. Kuryatkov; K. Zhu; B. Borisov; A. Chandolu; Ìu Gherasoiu; G. Kipshidze; S. N.G. Chu; M. Holtz; Yu Kudryavtsev; R. Asomoza; S. Nikishin; H. Temkin

doi:10.1063/1.1603333

Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, Ìu Gherasoiu, G. Kipshidze, S. N.G. Chu, M. Holtz, Yu Kudryavtsev, R. Asomoza, S. Nikishin, H. Temkin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N were discussed. It was found that p-n junctions in mesa-etched diodes exhibited low leakage current densities of 3×10^-10 A/cm² at near zero bias. Acceptor activation energy of 207±10 meV obtained from the temperature dependence of the forward current was found to be very similar to that of uniform alloy of Al_0.8Ga _0.92N that constituted the well material.

Original language	English
Pages (from-to)	1319-1321
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	7
DOIs	https://doi.org/10.1063/1.1603333
State	Published - Aug 18 2003

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@article{143e4cec75e343ef8b7d30318e83779e,

title = "Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N",

abstract = "Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N were discussed. It was found that p-n junctions in mesa-etched diodes exhibited low leakage current densities of 3×10-10 A/cm2 at near zero bias. Acceptor activation energy of 207±10 meV obtained from the temperature dependence of the forward current was found to be very similar to that of uniform alloy of Al0.8Ga 0.92N that constituted the well material.",

author = "V. Kuryatkov and K. Zhu and B. Borisov and A. Chandolu and {\`I}u Gherasoiu and G. Kipshidze and Chu, {S. N.G.} and M. Holtz and Yu Kudryavtsev and R. Asomoza and S. Nikishin and H. Temkin",

year = "2003",

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doi = "10.1063/1.1603333",

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journal = "Applied Physics Letters",

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Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N. / Kuryatkov, V.; Zhu, K.; Borisov, B.; Chandolu, A.; Gherasoiu, Ìu; Kipshidze, G.; Chu, S. N.G.; Holtz, M.; Kudryavtsev, Yu; Asomoza, R.; Nikishin, S.; Temkin, H.

In: Applied Physics Letters, Vol. 83, No. 7, 18.08.2003, p. 1319-1321.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N

AU - Kuryatkov, V.

AU - Zhu, K.

AU - Borisov, B.

AU - Chandolu, A.

AU - Gherasoiu, Ìu

AU - Kipshidze, G.

AU - Chu, S. N.G.

AU - Holtz, M.

AU - Kudryavtsev, Yu

AU - Asomoza, R.

AU - Nikishin, S.

AU - Temkin, H.

PY - 2003/8/18

Y1 - 2003/8/18

N2 - Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N were discussed. It was found that p-n junctions in mesa-etched diodes exhibited low leakage current densities of 3×10-10 A/cm2 at near zero bias. Acceptor activation energy of 207±10 meV obtained from the temperature dependence of the forward current was found to be very similar to that of uniform alloy of Al0.8Ga 0.92N that constituted the well material.

AB - Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N were discussed. It was found that p-n junctions in mesa-etched diodes exhibited low leakage current densities of 3×10-10 A/cm2 at near zero bias. Acceptor activation energy of 207±10 meV obtained from the temperature dependence of the forward current was found to be very similar to that of uniform alloy of Al0.8Ga 0.92N that constituted the well material.

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U2 - 10.1063/1.1603333

DO - 10.1063/1.1603333

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AN - SCOPUS:0042418793

VL - 83

SP - 1319

EP - 1321

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

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