@article{143e4cec75e343ef8b7d30318e83779e,
title = "Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N",
abstract = "Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N were discussed. It was found that p-n junctions in mesa-etched diodes exhibited low leakage current densities of 3×10-10 A/cm2 at near zero bias. Acceptor activation energy of 207±10 meV obtained from the temperature dependence of the forward current was found to be very similar to that of uniform alloy of Al0.8Ga 0.92N that constituted the well material.",
author = "V. Kuryatkov and K. Zhu and B. Borisov and A. Chandolu and {\`I}u Gherasoiu and G. Kipshidze and Chu, {S. N.G.} and M. Holtz and Yu Kudryavtsev and R. Asomoza and S. Nikishin and H. Temkin",
note = "Funding Information: The study was supported by the Novo Nordisk Scandinavian AS. CB received funding from the The Talent Management Program from AAU, Aalborg University . The funding sources were not involved in study design; in the collection, analysis and interpretation of data; in the writing of the report; and in the decision to submit the article for publication. ",
year = "2003",
month = aug,
day = "18",
doi = "10.1063/1.1603333",
language = "English",
volume = "83",
pages = "1319--1321",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "7",
}