Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N

V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, Ìu Gherasoiu, G. Kipshidze, S. N.G. Chu, M. Holtz, Yu Kudryavtsev, R. Asomoza, S. Nikishin, H. Temkin

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Abstract

Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N were discussed. It was found that p-n junctions in mesa-etched diodes exhibited low leakage current densities of 3×10-10 A/cm2 at near zero bias. Acceptor activation energy of 207±10 meV obtained from the temperature dependence of the forward current was found to be very similar to that of uniform alloy of Al0.8Ga 0.92N that constituted the well material.

Original languageEnglish
Pages (from-to)1319-1321
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number7
DOIs
StatePublished - Aug 18 2003

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