Electrical properties and behaviors of cuprous oxide cubes under high pressure

Cai Long Liu, Yong Ming Sui, Wan Bin Ren, Bo Heng Ma, Yan Li, Ning Ning Su, Qing Lin Wang, Yu Qiang Li, Jun Kai Zhang, Yong Hao Han, Yan Zhang Ma, Chun Xiao Gao

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

An accurate in situ electrical resistivity measurement of cuprous oxide cubes has been conducted in a diamond anvil cell at room temperature with pressures up to 25 GPa. The abnormal electrical resistivity variation found at 0.7-2.2 GPa is attributed to the phase transformation from a cubic to a tetragonal structure. Three other discontinuous changes in the electrical resistivity are observed around 8.5, 10.3, and 21.6 GPa, corresponding to the phase transitions from tetragonal to pseudocubic to hexagonal to another hexagonal phase, respectively. The first-principles calculations illustrate that the electrical resistivity decrease of the tetragonal phase is not related to band-gap shrinkage but related to a higher quantity of electrons excited from strain-induced states increasing in band gap with increasing pressure. The results indicate that the Cu 2O cubes begin to crush at about 15 GPa and completely transform into nanocrystalline at 25 GPa.

Original languageEnglish
Pages (from-to)7001-7003
Number of pages3
JournalInorganic Chemistry
Volume51
Issue number13
DOIs
StatePublished - Jul 2 2012

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    Liu, C. L., Sui, Y. M., Ren, W. B., Ma, B. H., Li, Y., Su, N. N., Wang, Q. L., Li, Y. Q., Zhang, J. K., Han, Y. H., Ma, Y. Z., & Gao, C. X. (2012). Electrical properties and behaviors of cuprous oxide cubes under high pressure. Inorganic Chemistry, 51(13), 7001-7003. https://doi.org/10.1021/ic3007662