Electrical and optical properties of p-type InGaN

B. N. Pantha; A. Sedhain; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3279149

Electrical and optical properties of p-type InGaN

B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

Mg-doped In_xGa_1-xN alloys were grown by metal organic chemical vapor deposition on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped In_xGa_1-x N epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed E_A in Mg-doped In _0.35Ga_0.65N alloys was about 43 meV, which is roughly four times smaller than that in Mg doped GaN. A room temperature resistivity as low as 0.4 ω cm (with a hole concentration ∼5× 10¹⁸ cm^-3 and hole mobility ∼3 cm²/V s) was obtained in Mg-doped In_0.22Ga_0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

Original language	English
Article number	261904
Journal	Applied Physics Letters
Volume	95
Issue number	26
DOIs	https://doi.org/10.1063/1.3279149
State	Published - 2009

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@article{7c78d38c09cf4761b20d132ab60cebdf,

title = "Electrical and optical properties of p-type InGaN",

abstract = "Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-x N epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In 0.35Ga0.65N alloys was about 43 meV, which is roughly four times smaller than that in Mg doped GaN. A room temperature resistivity as low as 0.4 ω cm (with a hole concentration ∼5× 1018 cm-3 and hole mobility ∼3 cm2/V s) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.",

author = "Pantha, {B. N.} and A. Sedhain and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: InGaN growth and optical characterization work is supported by NSF (Grant No. DMR0906879). The effort of achieving p-type conduction in InGaN is supported by DARPA and monitored by Dr. Michael Haney and Dr. John Zavada. H.X.J. and J.Y.L. would like to acknowledge the support of Edward Whitacre and Linda Whitacre endowed chairs through the AT&T foundation.",

year = "2009",

doi = "10.1063/1.3279149",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "26",

}

TY - JOUR

T1 - Electrical and optical properties of p-type InGaN

AU - Pantha, B. N.

AU - Sedhain, A.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: InGaN growth and optical characterization work is supported by NSF (Grant No. DMR0906879). The effort of achieving p-type conduction in InGaN is supported by DARPA and monitored by Dr. Michael Haney and Dr. John Zavada. H.X.J. and J.Y.L. would like to acknowledge the support of Edward Whitacre and Linda Whitacre endowed chairs through the AT&T foundation.

PY - 2009

Y1 - 2009

N2 - Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-x N epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In 0.35Ga0.65N alloys was about 43 meV, which is roughly four times smaller than that in Mg doped GaN. A room temperature resistivity as low as 0.4 ω cm (with a hole concentration ∼5× 1018 cm-3 and hole mobility ∼3 cm2/V s) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

AB - Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-x N epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In 0.35Ga0.65N alloys was about 43 meV, which is roughly four times smaller than that in Mg doped GaN. A room temperature resistivity as low as 0.4 ω cm (with a hole concentration ∼5× 1018 cm-3 and hole mobility ∼3 cm2/V s) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

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U2 - 10.1063/1.3279149

DO - 10.1063/1.3279149

M3 - Article

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SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261904

ER -

Electrical and optical properties of p-type InGaN

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