Abstract
Persisent photoconductivity (PPC) has been investigated in a Zn0.02Cd0.98Te semiconductor alloy. A transition from a photoconductivity phase to a PPC phase has been observed and a coexistence curve that separates these two phases has been obtained. We find that such a transition can be controlled by the bias voltage and excitation photon dose. The relaxation of PPC is found to follow a power law, IPPC(t)t-α. The decay parameter α is obtained as a function of the bias voltage, which shows that the carrier decay rate decreases almost linearly with increasing bias voltage in the PPC phase. A possible mechanism is the presence of random local-potential fluctuations in the sample, which strongly influence the carrier transport properties. The fluctuations could be induced either by alloy disorder or impurity compensation.
Original language | English |
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Pages (from-to) | 3810-3816 |
Number of pages | 7 |
Journal | Physical Review B |
Volume | 46 |
Issue number | 7 |
DOIs | |
State | Published - 1992 |