Electric-field-enhanced persistent photoconductivity in a Zn0.02Cd0.98Te semiconductor alloy

J. Y. Lin; A. Dissanayake; H. X. Jiang

doi:10.1103/PhysRevB.46.3810

Electric-field-enhanced persistent photoconductivity in a Zn0.02Cd0.98Te semiconductor alloy

J. Y. Lin, A. Dissanayake, H. X. Jiang

Electrical and Computer Engineering

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Abstract

Persisent photoconductivity (PPC) has been investigated in a Zn0.02Cd0.98Te semiconductor alloy. A transition from a photoconductivity phase to a PPC phase has been observed and a coexistence curve that separates these two phases has been obtained. We find that such a transition can be controlled by the bias voltage and excitation photon dose. The relaxation of PPC is found to follow a power law, IPPC(t)t-α. The decay parameter α is obtained as a function of the bias voltage, which shows that the carrier decay rate decreases almost linearly with increasing bias voltage in the PPC phase. A possible mechanism is the presence of random local-potential fluctuations in the sample, which strongly influence the carrier transport properties. The fluctuations could be induced either by alloy disorder or impurity compensation.

Original language	English
Pages (from-to)	3810-3816
Number of pages	7
Journal	Physical Review B
Volume	46
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.46.3810
State	Published - 1992

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Lin, J. Y., Dissanayake, A., & Jiang, H. X. (1992). Electric-field-enhanced persistent photoconductivity in a Zn0.02Cd0.98Te semiconductor alloy. Physical Review B, 46(7), 3810-3816. https://doi.org/10.1103/PhysRevB.46.3810

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AB - Persisent photoconductivity (PPC) has been investigated in a Zn0.02Cd0.98Te semiconductor alloy. A transition from a photoconductivity phase to a PPC phase has been observed and a coexistence curve that separates these two phases has been obtained. We find that such a transition can be controlled by the bias voltage and excitation photon dose. The relaxation of PPC is found to follow a power law, IPPC(t)t-α. The decay parameter α is obtained as a function of the bias voltage, which shows that the carrier decay rate decreases almost linearly with increasing bias voltage in the PPC phase. A possible mechanism is the presence of random local-potential fluctuations in the sample, which strongly influence the carrier transport properties. The fluctuations could be induced either by alloy disorder or impurity compensation.

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