TY - JOUR
T1 - Elastic strain in InGaN and AlGaN layers
AU - Wu, M. F.
AU - Yao, Shude
AU - Vantomme, A.
AU - Hogg, S.
AU - Langouche, G.
AU - Van Der Stricht, W.
AU - Jacobs, K.
AU - Moerman, I.
AU - Li, J.
AU - Zhang, G. Y.
N1 - Funding Information:
This work has been supported by the National Natural Science Foundation of China (No. 19775001 and 69789601), the Bilateral Cooperation between China and Flanders (96/32), the Belgian Fund for Scientific Research, Flanders (FWO), Concerted Action (GOA) programs and the Inter-University Attraction Poles (IUAP P4/10). One of the authors (W.V.S.) would like to acknowledge the financial support of the IWT.
PY - 2000/6/1
Y1 - 2000/6/1
N2 - InGaN and AlGaN layers were grown on Al2O3 substrate by metalorganic chemical vapor deposition (MOCVD) with a GaN intermediate layer. The thickness and the composition of the layers, 270 nm In0.18Ga0.82N and 765 nm Al0.28Ga0.72N, were determined by Rutherford backscattering (RBS). The elastic strain of these layers was determined by X-ray diffraction combined with RBS/channeling. The results show that these layers are partially strained with a perpendicular strain e⊥ = +0.21%, parallel strain e∥ = - 0.53% for the InGaN layer and e⊥ = - 0.16%, e∥ = + 0.39% for the AlGaN layer. The signs of e∥ and e⊥ of AlGaN are opposite to those of InGaN, since the lattice mismatch between AlGaN and GaN is negative while the lattice mismatch between InGaN and GaN is positive.
AB - InGaN and AlGaN layers were grown on Al2O3 substrate by metalorganic chemical vapor deposition (MOCVD) with a GaN intermediate layer. The thickness and the composition of the layers, 270 nm In0.18Ga0.82N and 765 nm Al0.28Ga0.72N, were determined by Rutherford backscattering (RBS). The elastic strain of these layers was determined by X-ray diffraction combined with RBS/channeling. The results show that these layers are partially strained with a perpendicular strain e⊥ = +0.21%, parallel strain e∥ = - 0.53% for the InGaN layer and e⊥ = - 0.16%, e∥ = + 0.39% for the AlGaN layer. The signs of e∥ and e⊥ of AlGaN are opposite to those of InGaN, since the lattice mismatch between AlGaN and GaN is negative while the lattice mismatch between InGaN and GaN is positive.
KW - AlGaN
KW - Elastic strain
KW - InGaN
KW - Rutherford backscattering/channelling
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=0012751623&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(00)00371-8
DO - 10.1016/S0921-5107(00)00371-8
M3 - Conference article
AN - SCOPUS:0012751623
SN - 0921-5107
VL - 75
SP - 232
EP - 235
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 2-3
T2 - The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors
Y2 - 13 June 1999 through 18 June 1999
ER -