Effects of well thickness on the light emission in InGaN/GaN and GaN/AlGaN multiple quantum wells

M. Smith, K. C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, H. Morkoc, A. Khan, Q. Chen

Research output: Contribution to journalConference articlepeer-review

Abstract

The effects of well thickness on the light emission properties and recombination dynamics in InxGa1-xN/GaN and GaN/AlxGa1-xN multiple quantum wells (MQW) grown by metallorganic chemical vapor deposition and reactive molecular beam epitaxy were studied by time-resolved photoluminescence. The results were compared to extrapolate the mechanisms and quantum efficiency of the optical emission in the structures. The optical transitions in the 25 angstroms and 45 angstroms well MQW samples were blue-shifted with respect to the InxGa1-xN epilayer, however, no such blue shift was evident for the 90 angstroms well MQW sample. For both InGaN/GaN and GaN/AlGaN multiple quantum wells, intrinsic localized exciton transitions with expected quantum confinement were observed.

Original languageEnglish
Pages (from-to)31-32
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

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