Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

K. C. Zeng; J. Y. Lin; H. X. Jiang; A. Salvador; G. Popovici; H. Tang; W. Kim; H. Morkoç

doi:10.1063/1.119896

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

K. C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, H. Morkoç

Electrical and Computer Engineering

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Abstract

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (L_w<40 Å) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 Å, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (L_w>40 Å) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (L_w>40 Å). The implications of these results on the device applications based on III-nitride MQWs have been discussed.

Original language	English
Pages (from-to)	1368-1370
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	10
DOIs	https://doi.org/10.1063/1.119896
State	Published - Sep 8 1997

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title = "Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells",

abstract = "Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (Lw<40 {\AA}) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 {\AA}, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (Lw>40 {\AA}) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (Lw>40 {\AA}). The implications of these results on the device applications based on III-nitride MQWs have been discussed.",

author = "Zeng, {K. C.} and Lin, {J. Y.} and Jiang, {H. X.} and A. Salvador and G. Popovici and H. Tang and W. Kim and H. Morko{\c c}",

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T1 - Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

AU - Zeng, K. C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Salvador, A.

AU - Popovici, G.

AU - Tang, H.

AU - Kim, W.

AU - Morkoç, H.

PY - 1997/9/8

Y1 - 1997/9/8

N2 - Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (Lw<40 Å) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 Å, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (Lw>40 Å) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (Lw>40 Å). The implications of these results on the device applications based on III-nitride MQWs have been discussed.

AB - Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (Lw<40 Å) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 Å, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (Lw>40 Å) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (Lw>40 Å). The implications of these results on the device applications based on III-nitride MQWs have been discussed.

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Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

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