Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

K. C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, H. Morkoç

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60 Scopus citations

Abstract

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) measurements. Our results have yielded that (i) the optical transitions in nominally undoped MQWs with narrow well thicknesses (Lw<40 Å) were blue shifted with respect to the GaN epilayer due to quantum confinement, however, no such blue shift was evident for the MQWs with well thicknesses larger than 40 Å, (ii) the band-to-impurity transitions were the dominant emission lines in nominally undoped MQWs of large well thicknesses (Lw>40 Å) at low temperatures, and (iii) Si doping improved significantly the crystalline quality of MQWs of large well thicknesses (Lw>40 Å). The implications of these results on the device applications based on III-nitride MQWs have been discussed.

Original languageEnglish
Pages (from-to)1368-1370
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number10
DOIs
StatePublished - Sep 8 1997

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