@article{1b61f703059648c2be9909674f6414b2,
title = "Effects of transverse doping variations on the transient response of silicon avalanche shaper devices",
abstract = "Two-dimensional (2-D) drift-diffusion simulations were performed to study the transient response of silicon avalanche shaper (SAS) devices that are used in high-power switching and pulse sharpening applications. The role of transverse doping variations on the transient device response has been studied. Our results clearly reveal a potential for filamentary current conduction. The filamentation, however, is shown to be strongly dependent on the transverse doping characteristics, and hence in principle, could be tailored.",
keywords = "Avalanche breakdown, power semiconductor switches, semiconductor device modeling, silicon",
author = "Hamid Jalali and Joshi, {Ravindra P.} and Gaudet, {John A.}",
note = "Funding Information: Manuscript received December 5, 1997; revised March 16, 1998. The review of this paper was arranged by Editor A. H. Marshak. This work was supported in part by the Air Force Office of Scientific Research under Contract F49620-93-C-0063/96-0825. H. Jalali was with the Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529-0246 USA. He is now with Sperry Marine, Inc., Charlottesville, VA 22902 USA. R. P. Joshi is with the Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529-0246 USA. J. Gaudet is with Air Force Research Laboratory, Directed Energy Directorate (AFRL/DE), Kirtland Air Force Base, NM 87117 USA. Publisher Item Identifier S 0018-9383(98)05265-4.",
year = "1998",
doi = "10.1109/16.704376",
language = "English",
volume = "45",
pages = "1761--1768",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "8",
}