Abstract
Two-dimensional (2-D) drift-diffusion simulations were performed to study the transient response of silicon avalanche shaper (SAS) devices that are used in high-power switching and pulse sharpening applications. The role of transverse doping variations on the transient device response has been studied. Our results clearly reveal a potential for filamentary current conduction. The filamentation, however, is shown to be strongly dependent on the transverse doping characteristics, and hence in principle, could be tailored.
| Original language | English |
|---|---|
| Pages (from-to) | 1761-1768 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 45 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1998 |
Keywords
- Avalanche breakdown
- power semiconductor switches
- semiconductor device modeling
- silicon
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Jalali, H., Joshi, R. P., & Gaudet, J. A. (1998). Effects of transverse doping variations on the transient response of silicon avalanche shaper devices. IEEE Transactions on Electron Devices, 45(8), 1761-1768. https://doi.org/10.1109/16.704376