Effects of transverse doping variations on the transient response of silicon avalanche shaper devices

Hamid Jalali, Ravindra P. Joshi, John A. Gaudet

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Two-dimensional (2-D) drift-diffusion simulations were performed to study the transient response of silicon avalanche shaper (SAS) devices that are used in high-power switching and pulse sharpening applications. The role of transverse doping variations on the transient device response has been studied. Our results clearly reveal a potential for filamentary current conduction. The filamentation, however, is shown to be strongly dependent on the transverse doping characteristics, and hence in principle, could be tailored.

Original languageEnglish
Pages (from-to)1761-1768
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume45
Issue number8
DOIs
StatePublished - 1998

Keywords

  • Avalanche breakdown
  • power semiconductor switches
  • semiconductor device modeling
  • silicon

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