Effects of the wave function localization in AlInGaN quaternary alloys

Fei Wang, Shu Shen Li, Jian Bai Xia, H. X. Jiang, J. Y. Lin, Jingbo Li, Su Huai Wei

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Using the first-principles band-structure method and the special quasirandom structures approach, the authors have investigated the band structure of random Alx Iny Ga1-x-y N quaternary alloys. They show that the wave functions of the band edge states are more localized on the InN sites. Consequently, the photoluminescence transition intensity in the alloy is higher than that in GaN. The valence band maximum state of the quaternary alloy is also higher than GaN with the same band gap, indicating that the alloy can be doped more easily as p -type.

Original languageEnglish
Article number061125
JournalApplied Physics Letters
Issue number6
StatePublished - 2007


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