Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

M. E. Aumer; S. F. Leboeuf; B. F. Moody; S. M. Bedair; K. Nam; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1469219

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

M. E. Aumer, S. F. Leboeuf, B. F. Moody, S. M. Bedair, K. Nam, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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Abstract

The recombination dynamics of optical transitions as well as strain effects in AlInGaN/In_0.08Ga_0.92N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, photoluminescence emission line shape, and nonradiative recombination behavior were found to be strong functions of strain as well as localization. The degree of carrier localization was inferred by modeling several aspects of optical behavior obtained from variable temperature time-resolved photoluminescence experiments. According to the modeling results, the degree of localization was found to be a minimum for unstrained QWs and increased as either tensile or compressive strain increased, indicating that InGaN QW microstructure is a function of the lattice-mismatch-induced strain experienced during deposition.

Original language	English
Pages (from-to)	3099-3101
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	17
DOIs	https://doi.org/10.1063/1.1469219
State	Published - Apr 29 2002

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title = "Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures",

abstract = "The recombination dynamics of optical transitions as well as strain effects in AlInGaN/In0.08Ga0.92N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, photoluminescence emission line shape, and nonradiative recombination behavior were found to be strong functions of strain as well as localization. The degree of carrier localization was inferred by modeling several aspects of optical behavior obtained from variable temperature time-resolved photoluminescence experiments. According to the modeling results, the degree of localization was found to be a minimum for unstrained QWs and increased as either tensile or compressive strain increased, indicating that InGaN QW microstructure is a function of the lattice-mismatch-induced strain experienced during deposition.",

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T1 - Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

AU - Aumer, M. E.

AU - Leboeuf, S. F.

AU - Moody, B. F.

AU - Bedair, S. M.

AU - Nam, K.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2002/4/29

Y1 - 2002/4/29

N2 - The recombination dynamics of optical transitions as well as strain effects in AlInGaN/In0.08Ga0.92N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, photoluminescence emission line shape, and nonradiative recombination behavior were found to be strong functions of strain as well as localization. The degree of carrier localization was inferred by modeling several aspects of optical behavior obtained from variable temperature time-resolved photoluminescence experiments. According to the modeling results, the degree of localization was found to be a minimum for unstrained QWs and increased as either tensile or compressive strain increased, indicating that InGaN QW microstructure is a function of the lattice-mismatch-induced strain experienced during deposition.

AB - The recombination dynamics of optical transitions as well as strain effects in AlInGaN/In0.08Ga0.92N quantum wells (QWs) were studied. QW emission energy, photoluminescence decay behavior, photoluminescence emission line shape, and nonradiative recombination behavior were found to be strong functions of strain as well as localization. The degree of carrier localization was inferred by modeling several aspects of optical behavior obtained from variable temperature time-resolved photoluminescence experiments. According to the modeling results, the degree of localization was found to be a minimum for unstrained QWs and increased as either tensile or compressive strain increased, indicating that InGaN QW microstructure is a function of the lattice-mismatch-induced strain experienced during deposition.

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Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

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