Effects of tensile and compressive strain on the luminescence properties of AllnGaN/lnGaN quantum well structures

M. E. Aumer; S. F. LeBoeuf; S. M. Bedair; M. Smith; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1306648

Effects of tensile and compressive strain on the luminescence properties of AllnGaN/lnGaN quantum well structures

M. E. Aumer, S. F. LeBoeuf, S. M. Bedair, M. Smith, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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Abstract

We report on the luminescence properties of AllnGaN/In_0.08Ga_0.92N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In_0.08Ga_0.92TN QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed.

Original language	English
Pages (from-to)	821-823
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	6
DOIs	https://doi.org/10.1063/1.1306648
State	Published - Aug 7 2000

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abstract = "We report on the luminescence properties of AllnGaN/In0.08Ga0.92N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In0.08Ga0.92TN QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed.",

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AU - Aumer, M. E.

AU - LeBoeuf, S. F.

AU - Bedair, S. M.

AU - Smith, M.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000/8/7

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N2 - We report on the luminescence properties of AllnGaN/In0.08Ga0.92N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In0.08Ga0.92TN QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed.

AB - We report on the luminescence properties of AllnGaN/In0.08Ga0.92N quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm In0.08Ga0.92TN QW was redshifted by 236 meV as the stress in the well was changed from -0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed.

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Effects of tensile and compressive strain on the luminescence properties of AllnGaN/lnGaN quantum well structures

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