Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

J. Z. Li; J. Y. Lin; H. X. Jiang; M. A. Khan

doi:10.1063/1.121485

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

J. Z. Li, J. Y. Lin, H. X. Jiang, M. A. Khan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Photocurrent (PC) transient characteristics of an AlGaN/GaN heterostructure UV detector have been studied. We observed that the PC transients of the AlGaN/GaN heterostructure depended strongly on its initial conditions. Under a pulsed laser excitation, the PC responsivity, dark current level, and decay time constant all increased progressively with the number of successive excitation pulses and eventually saturated at constant values after about 30 pulsed laser exposures. Our results indicate that the observed PC transient characteristics are directly correlated with the effect of persistent photoconductivity in the two-dimensional electron gas region caused by deep level impurities and can have a significant influence on the performance of the UV photodetectors based on AlGaN/GaN heterostructures.

Original language	English
Pages (from-to)	2868-2870
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	22
DOIs	https://doi.org/10.1063/1.121485
State	Published - 1998

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title = "Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector",

abstract = "Photocurrent (PC) transient characteristics of an AlGaN/GaN heterostructure UV detector have been studied. We observed that the PC transients of the AlGaN/GaN heterostructure depended strongly on its initial conditions. Under a pulsed laser excitation, the PC responsivity, dark current level, and decay time constant all increased progressively with the number of successive excitation pulses and eventually saturated at constant values after about 30 pulsed laser exposures. Our results indicate that the observed PC transient characteristics are directly correlated with the effect of persistent photoconductivity in the two-dimensional electron gas region caused by deep level impurities and can have a significant influence on the performance of the UV photodetectors based on AlGaN/GaN heterostructures.",

author = "Li, {J. Z.} and Lin, {J. Y.} and Jiang, {H. X.} and Khan, {M. A.}",

year = "1998",

doi = "10.1063/1.121485",

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volume = "72",

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journal = "Applied Physics Letters",

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T1 - Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

AU - Li, J. Z.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Khan, M. A.

PY - 1998

Y1 - 1998

N2 - Photocurrent (PC) transient characteristics of an AlGaN/GaN heterostructure UV detector have been studied. We observed that the PC transients of the AlGaN/GaN heterostructure depended strongly on its initial conditions. Under a pulsed laser excitation, the PC responsivity, dark current level, and decay time constant all increased progressively with the number of successive excitation pulses and eventually saturated at constant values after about 30 pulsed laser exposures. Our results indicate that the observed PC transient characteristics are directly correlated with the effect of persistent photoconductivity in the two-dimensional electron gas region caused by deep level impurities and can have a significant influence on the performance of the UV photodetectors based on AlGaN/GaN heterostructures.

AB - Photocurrent (PC) transient characteristics of an AlGaN/GaN heterostructure UV detector have been studied. We observed that the PC transients of the AlGaN/GaN heterostructure depended strongly on its initial conditions. Under a pulsed laser excitation, the PC responsivity, dark current level, and decay time constant all increased progressively with the number of successive excitation pulses and eventually saturated at constant values after about 30 pulsed laser exposures. Our results indicate that the observed PC transient characteristics are directly correlated with the effect of persistent photoconductivity in the two-dimensional electron gas region caused by deep level impurities and can have a significant influence on the performance of the UV photodetectors based on AlGaN/GaN heterostructures.

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EP - 2870

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

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